Physical mechanism of secondary-electron emission in Si wafers

CMOS-compatible RF/microwave devices,such as filters and amplifiers,have been widely used in wireless communication systems.However,secondary-electron emission phenomena often occur in RF/microwave devices based on silicon(Si)wafers,especially in the high-frequency range.In this paper,we have studied the major factors that influence the secondary-electron yield(SEY)in commercial Si wafers with different doping concentrations.We show that the SEY is suppressed as the doping concentration increases,corresponding to a relatively short effective escape depthλ.Meanwhile,the reduced narrow band gap is beneficial in suppressing the SEY,in which the absence of a shallow energy band below the conduction band will easily capture electrons,as revealed by first-principles calculations.Thus,the new physical mechanism combined with the effective escape depth and band gap can provide useful guidance for the design of integrated RF/microwave devices based on Si wafers.

Electron beam irradiation on novel coronavirus(COVID-19):A Monte-Carlo simulation

The novel coronavirus pneumonia triggered by COVID-19 is now raging the whole world.As a rapid and reliable killing COVID-19 method in industry,electron beam irradiation can interact with virus molecules and destroy their activity.With the unexpected appearance and quickly spreading of the virus,it is urgently necessary to figure out the mechanism of electron beam irradiation on COVID-19.In this study,we establish a virus structure and molecule model based on the detected gene sequence of Wuhan patient,and calculate irradiated electron interaction with virus atoms via a Monte Carlo simulation that track each elastic and inelastic collision of all electrons.The characteristics of irradiation damage on COVID-19,atoms’ionizations and electron energy losses are calculated and analyzed with regions.We simulate the different situations of incident electron energy for evaluating the influence of incident energy on virus damage.It is found that under the major protecting of an envelope protein layer,the inner RNA suffers the minimal damage.The damage for a^100-nm-diameter virus molecule is not always enhanced by irradiation energy monotonicity,for COVID-19,the irradiation electron energy of the strongest energy loss damage is 2 keV.

Dynamic characteristics of charging effects on the dielectric constant due to E-beam irradiation:a numerical simulation

A series of synthetic variations of material intrinsic properties always come with charging phenomena due to electron beam irradiation.The effects of charging on the dielectric constant will influence the charging dynamic in return.In this paper,we propose a numerical simulation for investigating the dynamic characteristics of charging effects on the dielectric constant due to electron beam irradiation.The scattering process between electrons and atoms is calculated considering elastic and inelastic collisions via the Rutherford model and the fast secondary electron model,respectively.Internal charge drift due to E-field,density gradient caused diffusion,charges trap by material defect,free electron and hole neutralization,and variation in the internal dielectric constant are considered when simulating the transport process.The dynamics of electron and hole distributions and charging states are demonstrated during E-beam irradiation.As a function of material nonlinear susceptibility and primary energy,the dynamics of charging states and dielectric constants are then presented in the charging process.It is found that the variation in the internal dielectric constant is more with respect to the depth and irradiation time.Material with a larger nonlinear susceptibility corresponds a faster charging enhancement.In addition,the effective dielectric constant and the surface potential have a linear relationship in the charging balance.Nevertheless,with shrinking charging affect range,the situation with a higher energy primary electron comes with less dielectric constant variation.The proposed numerical simulation mode of the charging process and the results presented in this study offer a comprehensive insight into the complicated charging phenomena in electron irradiation related fields.

Effect of Cu doping on the secondary electron yield of carbon films on Ag-plated aluminum alloy

Reducing the secondary electron yield(SEY)of Ag-plated aluminum alloy is important for high-power microwave components.In this work,Cu doped carbon films are prepared and the secondary electron emission characteristics are studied systematically.The secondary electron coefficientδ_(max) of carbon films increases with the Cu contents increasing at first,and then decreases to 1.53 at a high doping ratio of 0.645.From the viewpoint of surface structure,the higher the content of Cu is,the rougher the surface is,since more cluster particles appear on the surface due to the small solid solubility of Cu in the amorphous carbon network.However,from viewpoint of the electronic structure,the reduction of the sp2 hybrid bonds will increase the SEY effect as the content of Cu increases,due to the decreasing probability of collision with free electrons.Thus,the two mechanisms would compete and coexist to affect the SEY characteristics in Cu doped carbon films.