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Linear dichroism transition and polarization-sensitive photodetector of quasi-one-dimensional palladium bromide
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作者 朱万里 甄伟立 +5 位作者 牛瑞 焦珂珂 岳智来 胡慧杰 薛飞 张昌锦 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第6期532-539,共8页
Perpendicular optical reversal of the linear dichroism transition has promising applications in polarization-sensitive optoelectronic devices. We perform a systematical study on the in-plane optical anisotropy of quas... Perpendicular optical reversal of the linear dichroism transition has promising applications in polarization-sensitive optoelectronic devices. We perform a systematical study on the in-plane optical anisotropy of quasi-one-dimensional PdBr_(2) by using combined measurements of the angle-resolved polarized Raman spectroscopy(ARPRS) and anisotropic optical absorption spectrum. The analyses of ARPRS data validate the anisotropic Raman properties of the PdBr_(2) flake.And anisotropic optical absorption spectrum of PdBr_(2) nanoflake demonstrates distinct optical linear dichroism reversal. Photodetector constructed by PdBr_(2) nanowire exhibits high responsivity of 747 A·W^(-1) and specific detectivity of 5.8×10^(12) Jones. And the photodetector demonstrates prominent polarization-sensitive photoresponsivity under 405-nm light irradiation with large photocurrent anisotropy ratio of 1.56, which is superior to those of most of previously reported quasi-one-dimensional counterparts. Our study offers fundamental insights into the strong optical anisotropy exhibited by PdBr_(2), establishing it as a promising candidate for miniaturization and integration trends of polarization-related applications. 展开更多
关键词 linear dichroism reversal polarization sensitivity ANISOTROPY polarized photodetector
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Enhanced conductivity and weakened magnetism in Pb-doped Sr_(2)IrO_(4)
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作者 岳智来 甄伟立 +4 位作者 牛瑞 焦珂珂 朱文卡 皮雳 张昌锦 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第1期680-685,共6页
Group IV element Pb has been selected as the dopant to dope at the Sr site of Sr_(2)IrO_(4). It is exciting to find that the single-phase crystal structure could be maintained with a high Pb doping level of up to x=0.... Group IV element Pb has been selected as the dopant to dope at the Sr site of Sr_(2)IrO_(4). It is exciting to find that the single-phase crystal structure could be maintained with a high Pb doping level of up to x=0.3 in Sr_(2-x)Pb_(x)IrO_(4). The mapping data obtained from energy-dispersive x-ray spectroscopy analyses give solid evidence that the Pb ions are uniformly distributed in the Sr_(2)IrO_(4) matrix. The incorporation of Pb leads to a moderate depression of the canted antiferromagnetic ordering state. The electrical conductivity could be greatly enhanced when the Pb doping content is higher than x=0.2.The present results give a fresh material base to explore new physics in doped Sr_(2)IrO_(4) systems. 展开更多
关键词 iridates DOPING CONDUCTIVITY MAGNETISM
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Observation of Giant Topological Hall Effect in Room-Temperature Ferromagnet Cr_(0.82)Te
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作者 苗伟婷 甄伟立 +4 位作者 陆振 王恒宁 王杰 牛群 田明亮 《Chinese Physics Letters》 SCIE EI CAS CSCD 2024年第6期128-140,共13页
Novel magnetic materials with non-trivial magnetic structures have led to exotic magnetic transport properties and significantly promoted the development of spintronics in recent years.Among them is the Crx Tey family... Novel magnetic materials with non-trivial magnetic structures have led to exotic magnetic transport properties and significantly promoted the development of spintronics in recent years.Among them is the Crx Tey family,the magnetism of which can persist above room temperature,thus providing an ideal system for potential spintronic applications.Here we report the synthesis of a new compound,Cr_(0.82)Te,which demonstrates a record-high topological Hall effect at room temperature in this family.Cr_(0.82)Te displays soft ferromagnetism below the Curie temperature of 340 K.The magnetic measurement shows an obvious magneto-crystalline anisotropy with the easy axis located in the ab plane.The anomalous Hall effect can be well explained by a dominating skew scattering mechanism.Intriguing,after removing the normal Hall effect and anomalous Hall effect,a topological Hall effect can be observed up to 300 K and reaches up to 1.14μΩ·cm at 10 K,which is superior to most topological magnetic structural materials.This giant topological Hall effect possibly originates from the noncoplanar spin configuration during the spin flop process.Our work extends a new Cr_(x)Te_(y) system with topological non-trivial magnetic structure and broad prospects for spintronics applications in the future. 展开更多
关键词 mechanism process TOPOLOGICAL
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High-Performance Visible Light Photodetector Based on BiSeI Single Crystal 被引量:1
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作者 Xiu Yan wei-li zhen +3 位作者 Hui-Jie Hu Li Pi Chang-Jin Zhang Wen-Ka Zhu 《Chinese Physics Letters》 SCIE CAS CSCD 2021年第6期76-81,共6页
The continuing demand for new optoelectronic devices drives researchers to seek new materials suitable for photodetector applications.Recently,ternary compound semiconductors have entered researchers’field of vision,... The continuing demand for new optoelectronic devices drives researchers to seek new materials suitable for photodetector applications.Recently,ternary compound semiconductors have entered researchers’field of vision,among which chalcohalides have attracted special interest because of their rich properties and unique crystal structure consisting of atom chains and inter-chain van der Waals gaps.We have synthesized high-quality BiSeI single crystals with[110]-plane orientation and fabricated a photodetector.The optoelectronic measurements show a pronounced photocurrent signal with outstanding technical parameters,namely high responsivity(3.2 A/W),specific detectivity(7×10^(10) Jones)and external quantum efficiency(622%)for λ=635 nm,V_(ds)=0.1 V and P_(opt)=0.23 mW/cm^(2).The high performance of BiSeI photodetector and its layer structure make it a promising candidate for low-dimensional optoelectronic applications. 展开更多
关键词 OPTOELECTRONIC STRUCTURE CRYSTAL
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Transforming a Two-Dimensional Layered Insulator into a Semiconductor or a Highly Conductive Metal through Transition Metal Ion Intercalation
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作者 Xiu Yan wei-li zhen +4 位作者 Shi-Rui Weng Ran-Ran Zhang Wen-Ka Zhu Li Pi Chang-Jin Zhang 《Chinese Physics Letters》 SCIE CAS CSCD 2021年第5期89-93,共5页
Atomically thin two-dimensional(2D) materials are the building bricks for next-generation electronics and optoelectronics, which demand plentiful functional properties in mechanics, transport, magnetism and photorespo... Atomically thin two-dimensional(2D) materials are the building bricks for next-generation electronics and optoelectronics, which demand plentiful functional properties in mechanics, transport, magnetism and photoresponse.For electronic devices, not only metals and high-performance semiconductors but also insulators and dielectric materials are highly desirable. Layered structures composed of 2D materials of different properties can be delicately designed as various useful heterojunction or homojunction devices, in which the designs on the same material(namely homojunction) are of special interest because preparation techniques can be greatly simplified and atomically seamless interfaces can be achieved. We demonstrate that the insulating pristine ZnPS_3, a ternary transition-metal phosphorus trichalcogenide, can be transformed into a highly conductive metal and an n-type semiconductor by intercalating Co and Cu atoms, respectively. The field-effect-transistor(FET) devices are prepared via an ultraviolet exposure lithography technique. The Co-ZnPS_3 device exhibits an electrical conductivity of 8 × 10^(4) S/m, which is comparable to the conductivity of graphene. The Cu-ZnPS_3 FET reveals a current ON/OFF ratio of 1-05 and a mobility of 3 × 10^(-2 )cm^(2)·V^(-1)·s^(-1). The realization of an insulator, a typical semiconductor and a metallic state in the same 2D material provides an opportunity to fabricate n-metal homojunctions and other in-plane electronic functional devices. 展开更多
关键词 Transforming a Two-Dimensional Layered Insulator into a Semiconductor or a Highly Conductive Metal through Transition Metal Ion Intercalation
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