A series of hexagonal close-packed （HCP） Co-W thin films were deposited by sputtering on surface oxidized silicon substrates at 300 ℃. A linear dependency of saturation magnetization （Ms） on W content was found u...A series of hexagonal close-packed （HCP） Co-W thin films were deposited by sputtering on surface oxidized silicon substrates at 300 ℃. A linear dependency of saturation magnetization （Ms） on W content was found up to about 9 at. pct W, and then it underwent an increased Ms vs. W content curve as compared to the initial linear dependency. The thermal magnetization technique was used to confirm that the ino creased Ms behaviour is correlated to the phase separation of the Co-W thin films. The phase separation behaviour was also found to be dependent on W content and the reason was discussed in detail. Finally an interesting composition range was suggested to be about 13 at. pct-17 at. pct W for the Co-W thin films, in which they exhibit much higher magnetic anisotropy energy than Co-Cr thin films and improved phase separation.展开更多
基金supported by the National Natural Science Foundation of China(No50671020)Ministry of Education of China (No108039)
文摘A series of hexagonal close-packed （HCP） Co-W thin films were deposited by sputtering on surface oxidized silicon substrates at 300 ℃. A linear dependency of saturation magnetization （Ms） on W content was found up to about 9 at. pct W, and then it underwent an increased Ms vs. W content curve as compared to the initial linear dependency. The thermal magnetization technique was used to confirm that the ino creased Ms behaviour is correlated to the phase separation of the Co-W thin films. The phase separation behaviour was also found to be dependent on W content and the reason was discussed in detail. Finally an interesting composition range was suggested to be about 13 at. pct-17 at. pct W for the Co-W thin films, in which they exhibit much higher magnetic anisotropy energy than Co-Cr thin films and improved phase separation.
