A novel negative-resistance transistor (NRT) with a Lambda shaped I-V characteristic is demonstrated in the 0.5 μm standard CMOS process. To save on the number of component devices, this device does not use standard ...A novel negative-resistance transistor (NRT) with a Lambda shaped I-V characteristic is demonstrated in the 0.5 μm standard CMOS process. To save on the number of component devices, this device does not use standard device models provided by CMOS processes, but changes a MOSFET and a BJT into a single device by fabricating them in the same n-well, with a p-type base layer as the MOSFET's substrate. The NRT has a low valley current of -6.82 nA and a very high peak-to-valley current ratio of 3591. The peak current of the device is -24.49 μA which is low enough to reduce the power consumption of the deivce, and the average value of its negative resistance is about 32 kΩ. Unlike most negative-resistance devices which have been fabricated on compound semiconductor substrates in recent years, this novel NRT is based on a silicon substrate, compatible with mainstream CMOS technology. Our NRT dramatically reduces the number of devices, minimizing the area of the chip, has a low power consumption and thus a further reduction in cost.展开更多
In this paper,using aδ-doping dual-channel structure and GaAs substrate,a real space transfer transistor(RSTT)is designed and fabricated successfully.It has the standardΛ-shaped negative resistance I-V characteristi...In this paper,using aδ-doping dual-channel structure and GaAs substrate,a real space transfer transistor(RSTT)is designed and fabricated successfully.It has the standardΛ-shaped negative resistance I-V characteristics as well as a level and smooth valley region that the conventional RSTT has.The negative resistance parameters can be varied by changing gate voltage(VGS).For example,the PVCR varies from 2.1 to 10.6 while VGS changes from 0.6 V to 1.0 V.The transconductance for IP(ΔIP=ΔVGS)is 0.3 mS.The parameters of VP,VV and threshold gate voltage(VT)for negative resistance characteristics arising are all smaller than the value reported in the literature.Therefore,this device is suitable for low dissipation power application.展开更多
In light of fabricating resonant tunneling diode(RTD),in this paper a GaAs-based resonant tunneling transistor with gate structure(GRTT)has been designed and fabricated successfully.A systematic depiction centers on t...In light of fabricating resonant tunneling diode(RTD),in this paper a GaAs-based resonant tunneling transistor with gate structure(GRTT)has been designed and fabricated successfully.A systematic depiction centers on the designs of material structure,device structure,photo-lithography mask,fabrication of device and the measurement and analysis of parameters.The fabricated GRTT has a maximum PVCR of 46 and a maximum transconductance of 8 mS.The work lays the foundation for further improve-ment on the performance and parameters of RTT.展开更多
基金supported by the National Natural Science Foundation of China (61036002)
文摘A novel negative-resistance transistor (NRT) with a Lambda shaped I-V characteristic is demonstrated in the 0.5 μm standard CMOS process. To save on the number of component devices, this device does not use standard device models provided by CMOS processes, but changes a MOSFET and a BJT into a single device by fabricating them in the same n-well, with a p-type base layer as the MOSFET's substrate. The NRT has a low valley current of -6.82 nA and a very high peak-to-valley current ratio of 3591. The peak current of the device is -24.49 μA which is low enough to reduce the power consumption of the deivce, and the average value of its negative resistance is about 32 kΩ. Unlike most negative-resistance devices which have been fabricated on compound semiconductor substrates in recent years, this novel NRT is based on a silicon substrate, compatible with mainstream CMOS technology. Our NRT dramatically reduces the number of devices, minimizing the area of the chip, has a low power consumption and thus a further reduction in cost.
文摘In this paper,using aδ-doping dual-channel structure and GaAs substrate,a real space transfer transistor(RSTT)is designed and fabricated successfully.It has the standardΛ-shaped negative resistance I-V characteristics as well as a level and smooth valley region that the conventional RSTT has.The negative resistance parameters can be varied by changing gate voltage(VGS).For example,the PVCR varies from 2.1 to 10.6 while VGS changes from 0.6 V to 1.0 V.The transconductance for IP(ΔIP=ΔVGS)is 0.3 mS.The parameters of VP,VV and threshold gate voltage(VT)for negative resistance characteristics arising are all smaller than the value reported in the literature.Therefore,this device is suitable for low dissipation power application.
基金supported by the Ultra-High Speed ASIC Key Laboratory Foundation.
文摘In light of fabricating resonant tunneling diode(RTD),in this paper a GaAs-based resonant tunneling transistor with gate structure(GRTT)has been designed and fabricated successfully.A systematic depiction centers on the designs of material structure,device structure,photo-lithography mask,fabrication of device and the measurement and analysis of parameters.The fabricated GRTT has a maximum PVCR of 46 and a maximum transconductance of 8 mS.The work lays the foundation for further improve-ment on the performance and parameters of RTT.