Realization of functional flexible artificial synapse is a significant step toward neuromorphic computing.Herein,a flexible artificial synapse based on ferroelectric tunnel junctions(FTJs)is demonstrated,using BiFeO_(...Realization of functional flexible artificial synapse is a significant step toward neuromorphic computing.Herein,a flexible artificial synapse based on ferroelectric tunnel junctions(FTJs)is demonstrated,using BiFeO_(3)(BFO)thin film as the functional layer.The inorganic single crystalline FTJs grown on rigid perovskite substrates at high temperatures are integrated with the flexible plastic substrates,by using the water-soluble Sr_(3)Al_(2)O_(6)(SAO)as the sacrificial layer and the following transfer.The transferred freestanding BFO thin film exhibits excellent ferroelectric properties.Moreover,the memristive properties and the brain-like synaptic learning performance of the flexible FTJs are investigated.The results show that multilevel resistance states were maintained well of the flexible artificial synapse,together with their stable synaptic learning properties.Our work indicates the promising opportunity of ferroelectric thin film based flexible synapse used in the future neuromorphic computing system.展开更多
基金the National Natural Science Foundation of China(No.62004056)the Hundred Persons Plan of Hebei Province(Nos.E2018050004 and E2018050003)+5 种基金This work was also supported by National Natural Science Foundation of China(Nos.61674050 and 61874158)the Outstanding Youth Project of Hebei Province(No.F2016201220)the Project of Distinguished Young of Hebei Province(No.A2018201231)he Support Program for the Top Young Talents of Hebei Province(No.70280011807)the Training and Introduction of High-level Innovative Talents of Hebei University(No.801260201300)the Supporting Plan for 100 Excellent Innovative Talents in Colleges and Universities of Hebei Province(No.SLRC2019018).
文摘Realization of functional flexible artificial synapse is a significant step toward neuromorphic computing.Herein,a flexible artificial synapse based on ferroelectric tunnel junctions(FTJs)is demonstrated,using BiFeO_(3)(BFO)thin film as the functional layer.The inorganic single crystalline FTJs grown on rigid perovskite substrates at high temperatures are integrated with the flexible plastic substrates,by using the water-soluble Sr_(3)Al_(2)O_(6)(SAO)as the sacrificial layer and the following transfer.The transferred freestanding BFO thin film exhibits excellent ferroelectric properties.Moreover,the memristive properties and the brain-like synaptic learning performance of the flexible FTJs are investigated.The results show that multilevel resistance states were maintained well of the flexible artificial synapse,together with their stable synaptic learning properties.Our work indicates the promising opportunity of ferroelectric thin film based flexible synapse used in the future neuromorphic computing system.
基金supported by the National Key R&D Plan“Nano Frontier”Key Special Project(2021YFA1200502)the National Natural Science Foundation of China(62004056,61874158,and 62104058)+12 种基金the Cultivation Projects of National Major R&D Project(92164109)the Special Project of Strategic Leading Science and Technology of Chinese Academy of Sciences(XDB44000000-7)Hebei Basic Research Special Key Project(F2021201045)the Support Program for the Top Young Talents of Hebei Province(70280011807)the Supporting Plan for 100 Excellent Innovative Talents in Colleges and Universities of Hebei Province(SLRC2019018)the Interdisciplinary Research Program of Natural Science of Hebei University(DXK202101)the Institute of Life Sciences and Green Development(521100311)the Natural Science Foundation of Hebei Province(F2022201054 and F2021201022)the Outstanding Young Scientific Research and Innovation Team of Hebei University(605020521001)the Special Support Funds for National High Level Talents(041500120001)the Advanced Talents Incubation Program of the Hebei University(521000981426,521100221071,and 521000981363)the Science and Technology Project of Hebei Education Department(QN2020178 and QN2021026)Baoding Science and Technology Plan Project(2172P011)。
基金supported by the Agency for Science,Technology and Research (A*STAR) of Singapore (A1983c0036)the Singapore Ministry of Education (MOE2018-T2-2043)A*STAR IAF-ICP 11801E0036。
