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High-pressure and high-temperature sintering of pure cubic silicon carbide:A study on stress-strain and densification
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作者 刘金鑫 彭放 +5 位作者 马国龙 梁文嘉 何瑞琦 管诗雪 唐越 向晓君 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第9期498-505,共8页
Silicon carbide(SiC)is a high-performance structural ceramic material with excellent comprehensive properties,and is unmatched by metals and other structural materials.In this paper,raw SiC powder with an average grai... Silicon carbide(SiC)is a high-performance structural ceramic material with excellent comprehensive properties,and is unmatched by metals and other structural materials.In this paper,raw SiC powder with an average grain size of 5μm was sintered by an isothermal-compression process at 5.0 GPa and 1500?C;the maximum hardness of the sintered samples was31.3 GPa.Subsequently,scanning electron microscopy was used to observe the microscopic morphology of the recovered SiC samples treated in a temperature and extended pressure range of 0-1500?C and 0-16.0 GPa,respectively.Defects and plastic deformation in the SiC grains were further analyzed by transmission electron microscopy.Further,high-pressure in situ synchrotron radiation x-ray diffraction was used to study the intergranular stress distribution and yield strength under non-hydrostatic compression.This study provides a new viewpoint for the sintering of pure phase micron-sized SiC particles. 展开更多
关键词 high pressure and high temperature silicon carbide stress analysis DEFECT
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Congruent melting of tungsten phosphide at 5 GPa and 3200℃ for growing its large single crystals
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作者 Xiao-Jun Xiang Guo-Zhu Song +13 位作者 Xue-Feng Zhou Hao liang Yue Xu Shi-Jun Qin Jun-Pu Wang Fang Hong Jian-Hong Dai Bo-Wen Zhou wen-jia liang Yun-Yu Yin Yu-Sheng Zhao Fang Peng Xiao-Hui Yu Shan-Min Wang 《Chinese Physics B》 SCIE EI CAS CSCD 2020年第8期501-506,共6页
As one of important members of refractory materials,tungsten phosphide(WP)holds great potential for fundamental study and industrial applications in many fields of science and technology,due to its excellent propertie... As one of important members of refractory materials,tungsten phosphide(WP)holds great potential for fundamental study and industrial applications in many fields of science and technology,due to its excellent properties such as superconductivity and as-predicted topological band structure.However,synthesis of high-quality WP crystals is still a challenge by using tradition synthetic methods,because the synthesis temperature for growing its large crystals is very stringently required to be as high as 3000℃,which is far beyond the temperature capability of most laboratory-based devices for crystal growth.In addition,high temperature often induces the decomposition of metal phosphides,leading to off-stoichiometric samples based on which the materials'intrinsic properties cannot be explored.In this work,we report a high-pressure synthesis of single-crystal WP through a direct crystallization from cooling the congruent W-P melts at 5 GPa and^3200℃.In combination of x-ray diffraction,electron microscope,and thermal analysis,the crystal structure,morphology,and stability of recovered sample are well investigated.The final product is phase-pure and nearly stoichiometric WP in a single-crystal form with a large grain size,in excess of one millimeter,thus making it feasible to implement most experimental measurements,especially,for the case where a large crystal is required.Success in synthesis of high-quality WP crystals at high pressure can offer great opportunities for determining their intrinsic properties and also making more efforts to study the family of transition-metal phosphides. 展开更多
关键词 congruent melting tungsten phosphide single crystals high pressure and high temperature
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