This work details a study based on HfS_(2 )transistors utilizing an n-octadecylphosphonic acid-based self-assembled monolayer(SAM)as the gate dielectric.The fabrication of the SAM-based two-dimensional(2D)material tra...This work details a study based on HfS_(2 )transistors utilizing an n-octadecylphosphonic acid-based self-assembled monolayer(SAM)as the gate dielectric.The fabrication of the SAM-based two-dimensional(2D)material transistor is simple and can be used to improve the quality of the interface of air-sensitive 2D materials.In comparison to HfS_(2) transistors utilizing a conventional Al_2O_(3) gate insulator by atomic layer deposition,HfS_(2) transistors utilizing an SAM as the gate dielectric can reduce the operation region from 4 V to 2 V,enhance the field-effect mobility from 0.03 cm^2/Vs to 0.75 cm^2/Vs,improve the sub-threshold swing from 404 m V/dec to 156 m V/dec,and optimize the hysteresis to 0.03 V,thus demonstrating improved quality of the semiconductor/insulator interface.展开更多
基金Supported by the Japan Society for the Promotion of Science under Grant No JP25107004
文摘This work details a study based on HfS_(2 )transistors utilizing an n-octadecylphosphonic acid-based self-assembled monolayer(SAM)as the gate dielectric.The fabrication of the SAM-based two-dimensional(2D)material transistor is simple and can be used to improve the quality of the interface of air-sensitive 2D materials.In comparison to HfS_(2) transistors utilizing a conventional Al_2O_(3) gate insulator by atomic layer deposition,HfS_(2) transistors utilizing an SAM as the gate dielectric can reduce the operation region from 4 V to 2 V,enhance the field-effect mobility from 0.03 cm^2/Vs to 0.75 cm^2/Vs,improve the sub-threshold swing from 404 m V/dec to 156 m V/dec,and optimize the hysteresis to 0.03 V,thus demonstrating improved quality of the semiconductor/insulator interface.
