Two-dimensional electron gases(2 DEGs)formed at the interface between two oxide insulators present a promising platform for the exploration of emergent phenomena.While most of the previous works focused on SrTiO_(3-)b...Two-dimensional electron gases(2 DEGs)formed at the interface between two oxide insulators present a promising platform for the exploration of emergent phenomena.While most of the previous works focused on SrTiO_(3-)based 2 DEGs,here we took the amorphous-ABO_(3)/KTaO_(3)system as the research object to study the relationship between the interface conductivity and the redox property of B-site metal in the amorphous film.The criterion of oxide-oxide interface redox reactions for the B-site metals,Zr,Al,Ti,Ta,and Nb in conductive interfaces was revealed:the formation heat of metal oxide,ⅢH_(f)^(o),is lower than-350 kJ/(mol O)and the work function of the metalΦis in the range of 3.75 eV<Φ<4.4 eV.Furthermore,we found that the smaller absolute value ofⅢH_(f)^(o)and the larger value ofΦof the B-site metal would result in higher mobility of the two-dimensional electron gas that formed at the corresponding amorphous-ABO_(3)/KTaO_(3)interface.This finding paves the way for the design of high-mobility all-oxide electronic devices.展开更多
基金the National Key R&D Program of China(Grant Nos.2016YFA0300701,2017YFA0206304,and 2018YFA0305704)the National Natural Science Foundation of China(Grant Nos.11934016,111921004,51972335,and 11674378)the Key Program of the Chinese Academy of Sciences(Grant Nos.XDB33030200 and QYZDY-SSW-SLH020)。
文摘Two-dimensional electron gases(2 DEGs)formed at the interface between two oxide insulators present a promising platform for the exploration of emergent phenomena.While most of the previous works focused on SrTiO_(3-)based 2 DEGs,here we took the amorphous-ABO_(3)/KTaO_(3)system as the research object to study the relationship between the interface conductivity and the redox property of B-site metal in the amorphous film.The criterion of oxide-oxide interface redox reactions for the B-site metals,Zr,Al,Ti,Ta,and Nb in conductive interfaces was revealed:the formation heat of metal oxide,ⅢH_(f)^(o),is lower than-350 kJ/(mol O)and the work function of the metalΦis in the range of 3.75 eV<Φ<4.4 eV.Furthermore,we found that the smaller absolute value ofⅢH_(f)^(o)and the larger value ofΦof the B-site metal would result in higher mobility of the two-dimensional electron gas that formed at the corresponding amorphous-ABO_(3)/KTaO_(3)interface.This finding paves the way for the design of high-mobility all-oxide electronic devices.
