We report a type of thin film Al Ga In P red light emitting diode（RLED） on a metallic substrate by electroplating copper（Cu） to eliminate the absorption of Ga As grown substrate.The fabrication of the thin film RL...We report a type of thin film Al Ga In P red light emitting diode（RLED） on a metallic substrate by electroplating copper（Cu） to eliminate the absorption of Ga As grown substrate.The fabrication of the thin film RLED is presented in detail.Almost no degradations of epilayers properties are observed after this substrate transferred process.Photoluminescence and electroluminescence are measured to investigate the luminous characteristics.The thin film RLED shows a significant enhancement of light output power（LOP） by improving the injection efficiency and light extraction efficiency compared with the reference RLED on the Ga As parent substrate.The LOPs are specifically enhanced by 73.5% and 142% at typical injections of 2 A/cm^2 and 35 A/cm^2 respectively from electroluminescence.Moreover,reduced forward voltages,stable peak wavelengths and full widths at half maximum are obtained with the injected current increasing.These characteristic improvements are due to the Cu substrate with great current spreading and the back reflection by bottom electrodes.The substrate transferred technology based on electroplating provides an optional way to prepare high-performance optoelectronic devices,especially for thin film types.展开更多
It is known that the p–n junction of an absorption region is a crucial part for power conversion efficiency of photovoltaic power converters.We fabricate four samples with different dopant concentrations in base laye...It is known that the p–n junction of an absorption region is a crucial part for power conversion efficiency of photovoltaic power converters.We fabricate four samples with different dopant concentrations in base layers.The dependences of power conversion efficiency and fill factor on input power are displayed by photocurrent–voltage measurement.Photoluminescence characteristics under open circuit and connected circuit conditions are also studied.It is found that the status of p–n junction matching is the critical factor in affecting the power conversion efficiency.In addition,series resistance of photovoltaic power converters impairs the efficiency especially at high input powers.Both the key factors need to be considered to obtain high efficiency,and this work provides promising guidance on designing photovoltaic power converters.展开更多
基金Project supported by the National Key Research and Development Program of China(Grant Nos.2016YFB0400600 and 2016YFB0400603)the National Natural Science Foundation of China(Grant Nos.11574362,61210014,and 11374340)
文摘We report a type of thin film Al Ga In P red light emitting diode（RLED） on a metallic substrate by electroplating copper（Cu） to eliminate the absorption of Ga As grown substrate.The fabrication of the thin film RLED is presented in detail.Almost no degradations of epilayers properties are observed after this substrate transferred process.Photoluminescence and electroluminescence are measured to investigate the luminous characteristics.The thin film RLED shows a significant enhancement of light output power（LOP） by improving the injection efficiency and light extraction efficiency compared with the reference RLED on the Ga As parent substrate.The LOPs are specifically enhanced by 73.5% and 142% at typical injections of 2 A/cm^2 and 35 A/cm^2 respectively from electroluminescence.Moreover,reduced forward voltages,stable peak wavelengths and full widths at half maximum are obtained with the injected current increasing.These characteristic improvements are due to the Cu substrate with great current spreading and the back reflection by bottom electrodes.The substrate transferred technology based on electroplating provides an optional way to prepare high-performance optoelectronic devices,especially for thin film types.
基金Supported by the National Natural Science Foundation of China(Grant Nos.61704008 and 11574362)the Strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDB33000000).
文摘It is known that the p–n junction of an absorption region is a crucial part for power conversion efficiency of photovoltaic power converters.We fabricate four samples with different dopant concentrations in base layers.The dependences of power conversion efficiency and fill factor on input power are displayed by photocurrent–voltage measurement.Photoluminescence characteristics under open circuit and connected circuit conditions are also studied.It is found that the status of p–n junction matching is the critical factor in affecting the power conversion efficiency.In addition,series resistance of photovoltaic power converters impairs the efficiency especially at high input powers.Both the key factors need to be considered to obtain high efficiency,and this work provides promising guidance on designing photovoltaic power converters.
