We report a systematic study on layered metal SrCu_(4-x)P_(2) single crystals via transport, magnetization, thermodynamic measurements and structural characterization. We find that the crystals show large linear magne...We report a systematic study on layered metal SrCu_(4-x)P_(2) single crystals via transport, magnetization, thermodynamic measurements and structural characterization. We find that the crystals show large linear magnetoresistance without any sign of saturation with a magnetic field up to 30T. We also observe a phase transition with significant anomalies in resistivity and heat capacity at T_(p)~140 K. Thermal expansion measurement reveals a subtle lattice parameter variation near Tp, i.e.,?L_(c)/L_(c)~0.062%. The structural characterization confines that there is no structure transition below and above T_(p). All these results suggest that the nonmagnetic transition of SrCu_(4-x)P_(2) could be associated with structural distortion.展开更多
Flexible ferroelectric memories,endowing with high data storage density,provide a chance for the nextgeneration wearable electronics.Here,flexible inorganic Mn-doped BiFeO_(3) thin films were directly integrated on fl...Flexible ferroelectric memories,endowing with high data storage density,provide a chance for the nextgeneration wearable electronics.Here,flexible inorganic Mn-doped BiFeO_(3) thin films were directly integrated on fluorophlogopite mica(F-Mica)substrates by an easy and low-cost all solution chemical solution deposition(AS-CSD)route.The integration of LaNiO_(3) buffer layer can improve the film surface density and uniformity.The flexible characteristic can be achieved by reducing the thickness of F-Mica substrates for the ferroelectric thin films.In contrast to BiFe_(0.93)Mn_(0.07)O_(3)/LaNiO_(3)/Si thin film deposited on rigid substrates(Si),the BiFe_(0.93)Mn_(0.07)O_(3)/LaNiO_(3)/F-mica fabricated on F-Mica show better ferroelectric performances due to the improved crystal growth and less defects.More importantly,the obtained BiFe_(0.93)Mn_(0.07)O_(3)/LaNiO_(3)/F-mica ferroelectric thin films still show large remnant polarization of Pr ~64 μC/cm^(2)(deterioration of ~7.2%),good antifatigue properties up to 1.2×10^(8) cycles and outstanding retention behaviors for 1.6×10^(4) s after continuous bending.This work will provide a feasible route to fabricate flexible inorganic ferroelectric thin films through low-cost solution method and show attractive comprehensive performances in next-generation wearable smart devices.展开更多
基金Project supported by the National Key Research and Development Program of China (Grant Nos.2023YFA1607403,2021YFA1600201,and 2022YFA1602603)the Natural Science Foundation of China (Grant Nos.U19A2093,U2032214,and U2032163)+5 种基金the Collaborative Innovation Program of Hefei Science Center,CAS (Grant No.2019HSC-CIP 001)the Youth Innovation Promotion Association of CAS (Grant No.2021117)the Natural Science Foundation of Anhui Province (No.1908085QA15)the HFIPS Director’s Fund (Grant No.YZJJQY202304)the CASHIPS Director’s Fund (Grant No.YZJJ2022QN36)supported by the High Magnetic Field Laboratory of Anhui Province。
文摘We report a systematic study on layered metal SrCu_(4-x)P_(2) single crystals via transport, magnetization, thermodynamic measurements and structural characterization. We find that the crystals show large linear magnetoresistance without any sign of saturation with a magnetic field up to 30T. We also observe a phase transition with significant anomalies in resistivity and heat capacity at T_(p)~140 K. Thermal expansion measurement reveals a subtle lattice parameter variation near Tp, i.e.,?L_(c)/L_(c)~0.062%. The structural characterization confines that there is no structure transition below and above T_(p). All these results suggest that the nonmagnetic transition of SrCu_(4-x)P_(2) could be associated with structural distortion.
基金supported by the National Key Basic Research program(Grant No.2014CB931704)the Joint Funds of the National Natural Science Foundation of China and the Chinese Academy of Sciences Large-Scale Scientific Facility(Grant No.U1432137).
文摘Flexible ferroelectric memories,endowing with high data storage density,provide a chance for the nextgeneration wearable electronics.Here,flexible inorganic Mn-doped BiFeO_(3) thin films were directly integrated on fluorophlogopite mica(F-Mica)substrates by an easy and low-cost all solution chemical solution deposition(AS-CSD)route.The integration of LaNiO_(3) buffer layer can improve the film surface density and uniformity.The flexible characteristic can be achieved by reducing the thickness of F-Mica substrates for the ferroelectric thin films.In contrast to BiFe_(0.93)Mn_(0.07)O_(3)/LaNiO_(3)/Si thin film deposited on rigid substrates(Si),the BiFe_(0.93)Mn_(0.07)O_(3)/LaNiO_(3)/F-mica fabricated on F-Mica show better ferroelectric performances due to the improved crystal growth and less defects.More importantly,the obtained BiFe_(0.93)Mn_(0.07)O_(3)/LaNiO_(3)/F-mica ferroelectric thin films still show large remnant polarization of Pr ~64 μC/cm^(2)(deterioration of ~7.2%),good antifatigue properties up to 1.2×10^(8) cycles and outstanding retention behaviors for 1.6×10^(4) s after continuous bending.This work will provide a feasible route to fabricate flexible inorganic ferroelectric thin films through low-cost solution method and show attractive comprehensive performances in next-generation wearable smart devices.
