The fabrication of AlN by hydride vapor phase epitaxy

Aluminum nitride(AlN)is the promising substrates material for the epitaxial growth ofⅢ-nitrides devices,such as high-power,high-frequency electronic,deep ultraviolet optoelectronics and acoustic devices.However,it is rather difficult to obtain the high quality and crack-free thick AlN wafers because of the low surface migration of Al adatoms and the large thermal and lattice mismatches between the foreign substrates and AlN.In this work,the fabrication of AlN material by hydride vapor phase epitaxy(HVPE)was summarized and discussed.At last,the outlook of the production of AlN by HVPE was prospected.

Perovskite Self-Passivation with PCBM for Small Open-Circuit Voltage Loss

It is well known that [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) is a common n-type passivation material in PSCs, usually used as an interface modification layer. However, PCBM is extremely expensive and is not suitable for future industrialization. Herein, the various concentrations of PCBM as an additive are adopted for PSCs. It not only avoids the routine process of spin coating the multi-layer films, but also reduces the PCBM material and cost. Meanwhile, PCBM can passivate the grain surface and modulate morphology of perovskite films. Furthermore, the most important optical parameters of solar cells, the current density (Jsc), fill factor (FF), open-circuit voltage (Voc) and power conversion efficiencies (PCE) were improved. Especially, when the PCBM doping ratio in CH3NH3PbI3 (MAPbI3) precursor solution was 1 wt%, the device obtained the smallest Voc decay (less than 1%) in the p-i-n type PSCs with poly (3,4-ethylenedioxythiophene):poly (styrene sulfonate) (PEDOT:PSS) as hole transport layer (HTL) and fullerene (C60) as electron transport layer (ETL). The PSCs Voc stability improvement is attributed to enhanced crystallinity of photoactive layer and decreased non-radiative recombination by PCBM doping in the perovskites.