A monolithic integrated ultraviolet-infrared(UV-IR) dual-color photodetector based on graphene/GaN heterojunction was fabricated by vertically integrating a GaN nanowire array on a silicon substrate with monolayer gra...A monolithic integrated ultraviolet-infrared(UV-IR) dual-color photodetector based on graphene/GaN heterojunction was fabricated by vertically integrating a GaN nanowire array on a silicon substrate with monolayer graphene. The device detects UV and IR lights by different mechanisms. The UV detection is accomplished by the forbidden band absorption of GaN, and the IR detection is realized by the free electron absorption of graphene. At peak wavelengths of 360 nm and 1540 nm, the detector has responsivities up to 6.93 A/W and 0.11 A/W, detection efficiencies of 1.23 × 1012 cm·Hz1/2·W-1 and 1.88 × 1010 cm·Hz1/2·W-1, respectively,and a short response time of less than 3 ms.展开更多
基金supported by the National Natural Science Foundation of China (Nos. 61574161 and 61574130)the Natural Science Foundation of Jiangsu Province,China (No. BK20180252)the Department of Science and Technology of Jilin Province,China(No. 20180520177JH)。
文摘A monolithic integrated ultraviolet-infrared(UV-IR) dual-color photodetector based on graphene/GaN heterojunction was fabricated by vertically integrating a GaN nanowire array on a silicon substrate with monolayer graphene. The device detects UV and IR lights by different mechanisms. The UV detection is accomplished by the forbidden band absorption of GaN, and the IR detection is realized by the free electron absorption of graphene. At peak wavelengths of 360 nm and 1540 nm, the detector has responsivities up to 6.93 A/W and 0.11 A/W, detection efficiencies of 1.23 × 1012 cm·Hz1/2·W-1 and 1.88 × 1010 cm·Hz1/2·W-1, respectively,and a short response time of less than 3 ms.
