Phase-change memory(PCM)has been developed for three-dimensional(3D)data storage devices,posing huge challenges to the thermal stability and reliability of PCM.However,the low thermal stability of Ge2Sb2Te5(GST)limits...Phase-change memory(PCM)has been developed for three-dimensional(3D)data storage devices,posing huge challenges to the thermal stability and reliability of PCM.However,the low thermal stability of Ge2Sb2Te5(GST)limits further application.Here,we demonstrate PCM based on In0.9Ge2Sb2Te5(IGST)alloy,showing 180C 10-years data retention,6 ns set speed,one order of magnitude longer life time,and 75%reduced power consumption compared to GST-based device.The In can occupy the cationic positions and the In-Te octahedrons with good phase-change properties can geometrically match well with the host Ge-Te and Sb-Te octahedrons,acting as nucleation centers to boost the set speed and enhance the endurance of IGST device.Introducing stable matched phase-change octahedrons can be a feasible way to achieve practical PCMs.展开更多
基金Genetic Engineering of Precious Metal Materials in Yunnan Province(I)-Construction and Application of Precious Metal Materials Professional Database(I),Grant/Award Number:202002AB080001-1National Natural Science Foundation of China,Grant/Award Numbers:91964204,61874129,61874178,61904189+2 种基金Science and Technology Council of Shanghai,Grant/Award Numbers:20501120300,18DZ2272800Shanghai Sailing Program,Grant/Award Number:19YF1456100the National Key Research and Development Program of China,Grant/Award Numbers:2017YFA0206101,2018YFB0407500。
文摘Phase-change memory(PCM)has been developed for three-dimensional(3D)data storage devices,posing huge challenges to the thermal stability and reliability of PCM.However,the low thermal stability of Ge2Sb2Te5(GST)limits further application.Here,we demonstrate PCM based on In0.9Ge2Sb2Te5(IGST)alloy,showing 180C 10-years data retention,6 ns set speed,one order of magnitude longer life time,and 75%reduced power consumption compared to GST-based device.The In can occupy the cationic positions and the In-Te octahedrons with good phase-change properties can geometrically match well with the host Ge-Te and Sb-Te octahedrons,acting as nucleation centers to boost the set speed and enhance the endurance of IGST device.Introducing stable matched phase-change octahedrons can be a feasible way to achieve practical PCMs.
