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α-SiO_x∶H钝化Cz-Si表面的工艺优化与机制分析 被引量:4
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作者 黄海宾 张东华 +4 位作者 汪已琳 龚洪勇 高江 wolfgang r.fahrner 周浪 《功能材料》 EI CAS CSCD 北大核心 2014年第9期101-103,共3页
氢化非晶氧化硅(α-SiOx∶H)是一种优质的硅片表面钝化材料。采用PECVD法,以SiH4、CO2和H2作为气源制备α-SiOx∶H薄膜钝化Cz-Si表面,研究了沉积气压和CO2∶SiH4流量比对钝化效果的影响规律及作用机制。采用准稳态光电导法测试了硅片的... 氢化非晶氧化硅(α-SiOx∶H)是一种优质的硅片表面钝化材料。采用PECVD法,以SiH4、CO2和H2作为气源制备α-SiOx∶H薄膜钝化Cz-Si表面,研究了沉积气压和CO2∶SiH4流量比对钝化效果的影响规律及作用机制。采用准稳态光电导法测试了硅片的有效少子寿命并依此计算出其表面复合速率以对薄膜的钝化效果进行定量表征,采用光谱型椭偏仪测试了样品的介电常数虚部ε2谱对样品微观结构进行了定性分析。结果表明,(1)在所研究范围内,氧掺入非晶硅薄膜使得薄膜结构趋向非晶化,沉积气压主要对薄膜中的空位浓度造成影响,而CO2/SiH4流量比的增加可增加薄膜中的H含量并改变了硅氢键的结构,从而影响薄膜的钝化效果;(2)在CO2/SiH4流量比为3.0/3.0mL/min,沉积气压为22Pa条件下获得了最优钝化效果,钝化后硅片有效少子寿命为975μs,表面复合速率为3.9cm/s。 展开更多
关键词 氢化非晶氧化硅 PECVD 硅片表面钝化 空位浓度 氢含量
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Simulation and experimental study of a novel bifacial structure of silicon heterojunction solar cell for high efficiency and low cost 被引量:4
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作者 黄海宾 田罡煜 +6 位作者 周浪 袁吉仁 wolfgang r.fahrner 张闻斌 李杏兵 陈文浩 刘仁中 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第3期520-525,共6页
A novel structure of Ag gridlSiNx/n+-c-Si/n-c-Si/i-a-Si:H/p+-a-Si:HlTCO/Ag grid was designed to increase the ef- ficiency of bifacial amorphous/crystalline silicon-based solar cells and reduce the rear material co... A novel structure of Ag gridlSiNx/n+-c-Si/n-c-Si/i-a-Si:H/p+-a-Si:HlTCO/Ag grid was designed to increase the ef- ficiency of bifacial amorphous/crystalline silicon-based solar cells and reduce the rear material consumption and production cost. The simulation results show that the new structure obtains higher efficiency compared with the typical bifa- cial amorphous/crystalline silicon-based solar cell because of an increase in the short-circuit current (Jsc), while retaining the advantages of a high open-circuit voltage, low temperature coefficient, and good weak-light performance. Moreover, real cells composed of the novel structure with dimensions of 75 mm×75 mm were fabricated by a special fabrication recipe based on industrial processes. Without parameter optimization, the cell efficiency reached 21.1% with the Jsc of 41.7 mA/cm^2. In addition, the novel structure attained 28.55% potential conversion efficiency under an illumination of AM 1.5 G, 100 mW/cm^2. We conclude that the configuration of the Ag grid/SiNx/n+-c-Si/n-c-Si/i-a-Si:H/p+-a-Si:H/TCO/Ag grid is a promising structure for high efficiency and low cost. 展开更多
关键词 silicon solar cell a-Si:H/c-Si heterojunction short-circuit current
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