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Principle and Process Window of Cerium Dioxide Thin Film Fabrication with Dual Plasma Deposition 被引量:1
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作者 L.P. Wang B. Y Tang +2 位作者 x.b. tian YX.Leng Q. YZhang and P.K.Chu Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, China 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2001年第1期29-30,共2页
Cerium dioxide, CeO2, is a potentially superior material in a myriad of areas, and many methods have been proposed to deposit single crystal CeO2 thin films. A novel fabrication technique utilizing dual plasma generat... Cerium dioxide, CeO2, is a potentially superior material in a myriad of areas, and many methods have been proposed to deposit single crystal CeO2 thin films. A novel fabrication technique utilizing dual plasma generated by metal vacuum arc (MEVVA) and radio frequency (RF) is discussed in this paper. We have recently conducted a systematic investigation to determine the optimal process window to deposit CeO2 thin films’on Si(100) substrates. The X-ray diffraction results show the existence of CeO2(100) in the as-deposited sample. 展开更多
关键词 Thin Window Principle and Process Window of Cerium Dioxide Thin Film Fabrication with Dual Plasma Deposition
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