Nitrogen doping is applied to improve the thermal stability of SnTe.The crystallization temperature Tc of SnTe is below room temperature,which can be elevated to 216℃ by 7.65at.%nitrogen doping.Nitrogen doping result...Nitrogen doping is applied to improve the thermal stability of SnTe.The crystallization temperature Tc of SnTe is below room temperature,which can be elevated to 216℃ by 7.65at.%nitrogen doping.Nitrogen doping results in the formation of SnNx in the nitrogen doped SnTe(N-SnTe)materials,which hinders the movement of atoms and suppresses the crystallization,leading to a better thermal stability.The crystallization activation energy(Ea)and data retention for ten years of 7.65at.%N-SnTe are 1.89 eV and 81℃,respectively.Moreover,the voltage pulses have successfully triggered the SET and RESET operations of the N-SnTe based device at the voltage of 0.9 V and 2.6 V.The good thermal stability and reversible phase-change ability have proved the potential of N-SnTe for phase-change memory application.展开更多
基金Supported by the National Basic Research Program of China under Grant Nos 2010CB934300,2011CBA00607,2011CB9328004the National Integrate Circuit Research Program of China under Grant No 2009ZX02023-003+2 种基金the National Nat-ural Science Foundation of China under Grant Nos 60906004,60906003,61006087,61076121,61176122,61106001the Science and Technology Council of Shanghai under Grant Nos 11DZ2261000,1052nm07000,11QA1407800the Chinese Academy of Sciences under Grant No 20110490761.
文摘Nitrogen doping is applied to improve the thermal stability of SnTe.The crystallization temperature Tc of SnTe is below room temperature,which can be elevated to 216℃ by 7.65at.%nitrogen doping.Nitrogen doping results in the formation of SnNx in the nitrogen doped SnTe(N-SnTe)materials,which hinders the movement of atoms and suppresses the crystallization,leading to a better thermal stability.The crystallization activation energy(Ea)and data retention for ten years of 7.65at.%N-SnTe are 1.89 eV and 81℃,respectively.Moreover,the voltage pulses have successfully triggered the SET and RESET operations of the N-SnTe based device at the voltage of 0.9 V and 2.6 V.The good thermal stability and reversible phase-change ability have proved the potential of N-SnTe for phase-change memory application.
