The charge-storage characteristics of charge trapping memory devices containing different sizes of Au nanocrystals(NCs)sandwiched by Al2O3 tunneling and blocking layers are studied.A strong impact of both Au NC size a...The charge-storage characteristics of charge trapping memory devices containing different sizes of Au nanocrystals(NCs)sandwiched by Al2O3 tunneling and blocking layers are studied.A strong impact of both Au NC size and inter-NC distance on the charge trapping capability of the devices is observed.The total surface area of Au NCs associated with Au NC size is supposed to be a key factor in the charge-storage capability,and the device with larger size of Au NCs and a suitable inter-NC distance will possess better charge trapping capability.Variable range hopping as the lateral charge loss mechanism is considered as the main reason for the decrease of the charge trapping capability when Au NCs grow and overlap neighbors.展开更多
GeTe_(4) films are deposited by using a dc magnetron sputtering technique, and its structural, thermal and electrical properties are investigated systematically. The prototypical phase-change memory cells are fabricat...GeTe_(4) films are deposited by using a dc magnetron sputtering technique, and its structural, thermal and electrical properties are investigated systematically. The prototypical phase-change memory cells are fabricated by using a focused ion beam and magnetron sputtering techniques. Compared with Ge_(2)Sb_(2)Te_(5), the GeTe_(4) film exhibits a higher crystallization temperature (235℃), better data retention of ten years at 129℃, and larger activation energy (2.94 eV). GeTe4 phase change memory cells with an effective diameter of 1 μm show proper switching speed, low power consumption, and good resistance contrast. The Set and Reset operations are achieved by using a 200-ns 2.0-V pulse and a 30-ns 3.0-V pulse, respectively. The dynamic switching ratio between the OFF and ON states is larger than 1×10^(4).展开更多
We report a novel charge-trap memory device with a composition-modulated Zr-silicate high-k dielectric mul- tilayer structure prepared by using the pulsed laser deposition technique. The device employs amorphous （ZrO...We report a novel charge-trap memory device with a composition-modulated Zr-silicate high-k dielectric mul- tilayer structure prepared by using the pulsed laser deposition technique. The device employs amorphous （ZrO2）0.5（SiO2）0.5 as the tunneling and blocking oxide layers, and ZrO2 nanocrystals as the trapping storage layer. Zr02 nanocrystals are precipitated from the phase separation of （ZrO2）0.5（SiO2）0.2 films annealed at 800℃, and isolated from each other within the amorphous （ZrO2）0.5（SiO2）0.5 matrix. Our charge trapping device shows a memory window of 2.6 V and a stored electron density of 1×10^13/cm2.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 61176124the National Basic Research Program of China under Grant No 2010CB934201the Priority Academic Program Development of Jiangsu Higher Education Institutions.
文摘The charge-storage characteristics of charge trapping memory devices containing different sizes of Au nanocrystals(NCs)sandwiched by Al2O3 tunneling and blocking layers are studied.A strong impact of both Au NC size and inter-NC distance on the charge trapping capability of the devices is observed.The total surface area of Au NCs associated with Au NC size is supposed to be a key factor in the charge-storage capability,and the device with larger size of Au NCs and a suitable inter-NC distance will possess better charge trapping capability.Variable range hopping as the lateral charge loss mechanism is considered as the main reason for the decrease of the charge trapping capability when Au NCs grow and overlap neighbors.
基金the National Natural Science Foundation of China under Grant Nos 51072078 and 61076008the National Basic Research Program of China under Grant No 2010CB630704the College Graduate Research and Innovation Project of Jiangsu Province under Grant No CXZZ12_0050.
文摘GeTe_(4) films are deposited by using a dc magnetron sputtering technique, and its structural, thermal and electrical properties are investigated systematically. The prototypical phase-change memory cells are fabricated by using a focused ion beam and magnetron sputtering techniques. Compared with Ge_(2)Sb_(2)Te_(5), the GeTe_(4) film exhibits a higher crystallization temperature (235℃), better data retention of ten years at 129℃, and larger activation energy (2.94 eV). GeTe4 phase change memory cells with an effective diameter of 1 μm show proper switching speed, low power consumption, and good resistance contrast. The Set and Reset operations are achieved by using a 200-ns 2.0-V pulse and a 30-ns 3.0-V pulse, respectively. The dynamic switching ratio between the OFF and ON states is larger than 1×10^(4).
基金Supported by the National Natural Science Foundation of China under Grant Nos 50972054 and 60636010, and the National Basic Research Program of China under Grant Nos 2006CB921803 and 2010CB934201.
文摘We report a novel charge-trap memory device with a composition-modulated Zr-silicate high-k dielectric mul- tilayer structure prepared by using the pulsed laser deposition technique. The device employs amorphous （ZrO2）0.5（SiO2）0.5 as the tunneling and blocking oxide layers, and ZrO2 nanocrystals as the trapping storage layer. Zr02 nanocrystals are precipitated from the phase separation of （ZrO2）0.5（SiO2）0.2 films annealed at 800℃, and isolated from each other within the amorphous （ZrO2）0.5（SiO2）0.5 matrix. Our charge trapping device shows a memory window of 2.6 V and a stored electron density of 1×10^13/cm2.
