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A New Method for Thin Film Deposition-Faced Microwave Electron Cyclotron Resonance Plasma Sources Enhanced Direct-Current Magnetron Sputtering 被引量:4
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作者 XU Jun MA Teng-cai +2 位作者 LU Wen-qi xia yuan-liang DENG Xin-lu 《Chinese Physics Letters》 SCIE CAS CSCD 2000年第8期586-588,共3页
A new reactive magnetron sputtering system enhanced by the faced microwave electron cyclotron resonance plasma source was designed and amorphous CN_(x) films has been prepared by using this system.The character izatio... A new reactive magnetron sputtering system enhanced by the faced microwave electron cyclotron resonance plasma source was designed and amorphous CN_(x) films has been prepared by using this system.The character ization of the films by interference microscopy,atomic force microscopy,and x-ray photoelectron spectroscopy shows that the deposition rate is strongly affected by the direct-current bias,and the films are composed by a single carbon nitride phase and the N/C ratio is 4:3.2,which is close to that of C_(3)N_(4)(4:3). 展开更多
关键词 ELECTRON PLASMA MICROWAVE
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