The electronic structure,magnetic,and optical properties of two-dimensional(2D)GaSe doped with rare earth elements X(X=Sc,Y,La,Ce,Eu)were calculated using the first-principles plane wave method based on den-sity funct...The electronic structure,magnetic,and optical properties of two-dimensional(2D)GaSe doped with rare earth elements X(X=Sc,Y,La,Ce,Eu)were calculated using the first-principles plane wave method based on den-sity functional theory.The results show that intrinsic 2D GaSe is a p-type nonmagnetic semiconductor with an indi-rect bandgap of 2.6611 eV.The spin-up and spin-down channels of Sc-,Y-,and La-doped 2D GaSe are symmetric,they are non-magnetic semiconductors.The magnetic moments of Ce-and Eu-doped 2D GaSe are 0.908μ_(B)and 7.163μ_(B),which are magnetic semiconductors.Impurity energy levels appear in both spin-up and spin-down chan-nels of Eu-doped 2D GaSe,which enhances the probability of electron transition.Compared with intrinsic 2D GaSe,the static dielectric constant of the doped 2D GaSe increases,and the polarization ability is strengthened.The ab-sorption spectrum of the doped 2D GaSe shifts in the low-energy direction,and the red-shift phenomenon occurs,which extends the absorption spectral range.The optical reflection coefficient of the doped 2D GaSe is improved in the low energy region,and the improvement of Eu-doped 2D GaSe is the most obvious.展开更多
采用基于密度泛函理论(DFT)的第一性原理计算方法,计算了Mn4Si7及Mo掺杂Mn4Si7的电子结构和光学性质。计算结果表明Mn4Si7的禁带宽度Eg=0.804 e V,Mo掺杂Mn4Si7的禁带宽度Eg=0.636 e V。掺杂使得Mn4Si7费米面附近的电子结构发生改变,导...采用基于密度泛函理论(DFT)的第一性原理计算方法,计算了Mn4Si7及Mo掺杂Mn4Si7的电子结构和光学性质。计算结果表明Mn4Si7的禁带宽度Eg=0.804 e V,Mo掺杂Mn4Si7的禁带宽度Eg=0.636 e V。掺杂使得Mn4Si7费米面附近的电子结构发生改变,导带底由Γ点转移为Y点向低能方向下偏移,价带顶向高能方向上偏移,带隙变窄。计算还表明Mo掺杂Mn4Si7使介电函数、折射率、吸收系数及光电导率等光学性质增加。展开更多
文摘The electronic structure,magnetic,and optical properties of two-dimensional(2D)GaSe doped with rare earth elements X(X=Sc,Y,La,Ce,Eu)were calculated using the first-principles plane wave method based on den-sity functional theory.The results show that intrinsic 2D GaSe is a p-type nonmagnetic semiconductor with an indi-rect bandgap of 2.6611 eV.The spin-up and spin-down channels of Sc-,Y-,and La-doped 2D GaSe are symmetric,they are non-magnetic semiconductors.The magnetic moments of Ce-and Eu-doped 2D GaSe are 0.908μ_(B)and 7.163μ_(B),which are magnetic semiconductors.Impurity energy levels appear in both spin-up and spin-down chan-nels of Eu-doped 2D GaSe,which enhances the probability of electron transition.Compared with intrinsic 2D GaSe,the static dielectric constant of the doped 2D GaSe increases,and the polarization ability is strengthened.The ab-sorption spectrum of the doped 2D GaSe shifts in the low-energy direction,and the red-shift phenomenon occurs,which extends the absorption spectral range.The optical reflection coefficient of the doped 2D GaSe is improved in the low energy region,and the improvement of Eu-doped 2D GaSe is the most obvious.
文摘采用基于密度泛函理论(DFT)的第一性原理计算方法,计算了Mn4Si7及Mo掺杂Mn4Si7的电子结构和光学性质。计算结果表明Mn4Si7的禁带宽度Eg=0.804 e V,Mo掺杂Mn4Si7的禁带宽度Eg=0.636 e V。掺杂使得Mn4Si7费米面附近的电子结构发生改变,导带底由Γ点转移为Y点向低能方向下偏移,价带顶向高能方向上偏移,带隙变窄。计算还表明Mo掺杂Mn4Si7使介电函数、折射率、吸收系数及光电导率等光学性质增加。
