Copper antimony selenium(CuSbSe_(2))has advantages of adjustable band gaps from 1.09 eV to 1.2 eV,high light absorption coefficient(>105 cm-1),and low grain generation temperature(300—400℃),which is suitable for ...Copper antimony selenium(CuSbSe_(2))has advantages of adjustable band gaps from 1.09 eV to 1.2 eV,high light absorption coefficient(>105 cm-1),and low grain generation temperature(300—400℃),which is suitable for the preparation of solar cells.However,the stable range of CuSbSe_(2)(CASe)phase is narrow,which is inevitable to form Sb_(2)Se_(3)and Cu_(3)SbSe_(4)second phase during the preparation process.In this work,selenization annealing of Sb/Cu metal layer to prepare CASe thin films with pulse electrodeposition process was studied,and the growth mechanism of CASe film was analyzed.Cu and Sb reacted with Se to form Cu_(2)Se and Sb_(2)Se_(3),respectively.Then Cu_(2)Se and Sb_(2)Se_(3)further reacted to generate CASe.Since the formation temperature of Cu_(3)SbSe_(4)was lower than that of CASe,the preferential formation of Cu_(3)SbSe_(4)led to layer separation.When the annealing temperature was too high,CASe decomposed to form Cu_(3)SbSe_(3)and Sb_(2)Se_(3).Additionally,by increasing the heating rate,the separation of CASe thin films was effectively improved,and the CASe thin films with relatively high crystallinity were obtained at 360℃with heating rate of 30℃/min and selenization time of 20 min.展开更多
The silicon vertical multi-junction （VMJ） solar cell has a good potential in high concentration, but it requires high quality front and back surface passivation layers to keep its high efficiency. We try to add dopa...The silicon vertical multi-junction （VMJ） solar cell has a good potential in high concentration, but it requires high quality front and back surface passivation layers to keep its high efficiency. We try to add dopants into the front and back surfaces of the VMJ cell to release this strict requirement in this work. The effects of recombination velocities, doping types and doping pro- files of front and back surfaces on the performance of the P-type VMJ cell were calculated under 1 sun and 1000 suns. The 2D numerical simulation tool TCAD software was used. The performance of the VMJ cell without front and back surface dopants was also calculated for comparison. It was found that the requirement of high quality front and back surface passivation layers could be released remarkably by adding either N-type or W-type front and back surface dopants. For the two types of front surface dopants, the highest efficiencies of the cells were got by light dopant; for the two types of back surface dopants, the doping type and profile affected little on the performance of the cell in our calculation range. It was also found that the series resistance of the VMJ cell with N-type front surface dopant was decreased by the 2D effect of front surface emitter. The VMJ cell with W-type front surface dopant had the highest efficiency under 1000 suns and the VMJ cell with N-type front surface dopant had the highest efficiency under 1 sun in our calculation range.展开更多
基金the National Natural Science Foundation of China(Nos.61804108 and 62074084)。
文摘Copper antimony selenium(CuSbSe_(2))has advantages of adjustable band gaps from 1.09 eV to 1.2 eV,high light absorption coefficient(>105 cm-1),and low grain generation temperature(300—400℃),which is suitable for the preparation of solar cells.However,the stable range of CuSbSe_(2)(CASe)phase is narrow,which is inevitable to form Sb_(2)Se_(3)and Cu_(3)SbSe_(4)second phase during the preparation process.In this work,selenization annealing of Sb/Cu metal layer to prepare CASe thin films with pulse electrodeposition process was studied,and the growth mechanism of CASe film was analyzed.Cu and Sb reacted with Se to form Cu_(2)Se and Sb_(2)Se_(3),respectively.Then Cu_(2)Se and Sb_(2)Se_(3)further reacted to generate CASe.Since the formation temperature of Cu_(3)SbSe_(4)was lower than that of CASe,the preferential formation of Cu_(3)SbSe_(4)led to layer separation.When the annealing temperature was too high,CASe decomposed to form Cu_(3)SbSe_(3)and Sb_(2)Se_(3).Additionally,by increasing the heating rate,the separation of CASe thin films was effectively improved,and the CASe thin films with relatively high crystallinity were obtained at 360℃with heating rate of 30℃/min and selenization time of 20 min.
基金supported by the National Natural Science Foundation of China(Grant Nos.61275040,60976046,60837001,61021003)the National Basic Research Program of China("973" Project)(Grant No.2012CB934204)by Chinese Academy of Sciences(Grant No.Y072051002)
文摘The silicon vertical multi-junction （VMJ） solar cell has a good potential in high concentration, but it requires high quality front and back surface passivation layers to keep its high efficiency. We try to add dopants into the front and back surfaces of the VMJ cell to release this strict requirement in this work. The effects of recombination velocities, doping types and doping pro- files of front and back surfaces on the performance of the P-type VMJ cell were calculated under 1 sun and 1000 suns. The 2D numerical simulation tool TCAD software was used. The performance of the VMJ cell without front and back surface dopants was also calculated for comparison. It was found that the requirement of high quality front and back surface passivation layers could be released remarkably by adding either N-type or W-type front and back surface dopants. For the two types of front surface dopants, the highest efficiencies of the cells were got by light dopant; for the two types of back surface dopants, the doping type and profile affected little on the performance of the cell in our calculation range. It was also found that the series resistance of the VMJ cell with N-type front surface dopant was decreased by the 2D effect of front surface emitter. The VMJ cell with W-type front surface dopant had the highest efficiency under 1000 suns and the VMJ cell with N-type front surface dopant had the highest efficiency under 1 sun in our calculation range.
