Deposition of CN_(x) thin films on Si(111)has been performed by laser ablation of graphite under a low-energy nitrogen ion beam bombardment.Films with a maximum N-concentration of 34%are obtained.The N species is foun...Deposition of CN_(x) thin films on Si(111)has been performed by laser ablation of graphite under a low-energy nitrogen ion beam bombardment.Films with a maximum N-concentration of 34%are obtained.The N species is found to be relatively constant along the depth of films.X-ray spectroscopy data confirm the existence of covalent C-N bonds.Nanocrystallites structure has been detected in the amorphous matrix of the films.Qualitative hardness tests indicate that the films are relatively hard and adhesive.展开更多
文摘Deposition of CN_(x) thin films on Si(111)has been performed by laser ablation of graphite under a low-energy nitrogen ion beam bombardment.Films with a maximum N-concentration of 34%are obtained.The N species is found to be relatively constant along the depth of films.X-ray spectroscopy data confirm the existence of covalent C-N bonds.Nanocrystallites structure has been detected in the amorphous matrix of the films.Qualitative hardness tests indicate that the films are relatively hard and adhesive.
