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法布里-珀罗干涉仪测平板玻璃折射率的方法研究 被引量:4
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作者 严琪琪 唐芳 +2 位作者 沈嵘 许怀哲 李华 《物理实验》 2019年第5期22-25,28,共5页
根据光线在法布里-珀罗干涉仪中的传播特点,提出了测量平板玻璃折射率的方法 .首先对法布里-珀罗干涉仪中插入平板玻璃前、后所产生的相邻等倾干涉亮纹直径平方的差值和法布里-珀罗干涉仪内、外介质的折射率之间的关系分别进行了理论分... 根据光线在法布里-珀罗干涉仪中的传播特点,提出了测量平板玻璃折射率的方法 .首先对法布里-珀罗干涉仪中插入平板玻璃前、后所产生的相邻等倾干涉亮纹直径平方的差值和法布里-珀罗干涉仪内、外介质的折射率之间的关系分别进行了理论分析;然后搭建实验光路,使用移测显微镜对干涉亮纹直径进行观察和测量,在平板玻璃厚度已知的前提下,即可得出平板玻璃的折射率,且实验中观察到的现象和测量结果与理论分析相吻合. 展开更多
关键词 法布里-珀罗干涉仪 折射率 光程差 等倾干涉 干涉圆环直径
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The Unconventional Transport Properties of Dirac Fermions in Graphyne
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作者 LIN Xin WANG Hai-Long +1 位作者 PAN Hui xu huai-zhe 《Chinese Physics Letters》 SCIE CAS CSCD 2013年第7期189-192,共4页
A two-band Hamiltonian for β-graphyne is derived by the k·p method.The energy dispersions around the Dirac points are analytically obtained depending on the relative amplitude of the hopping terms t_(1)/t_(2),an... A two-band Hamiltonian for β-graphyne is derived by the k·p method.The energy dispersions around the Dirac points are analytically obtained depending on the relative amplitude of the hopping terms t_(1)/t_(2),and the Dirac cones are elliptical when -2t_(1)/t_(2)j.This interesting feature is useful for direction-dependent wave filter devices. 展开更多
关键词 method. DIRAC FERMI
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Red Luminesecnce from Self-Assembled InAlAs/AlGaAs Quantum Dots with Bimodal Size Distribution
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作者 ZHOU Wei xu Bo +9 位作者 xu huai-zhe LIU Feng-qi GONG Qian JIANG Wei-hong SUN Zhong-zhe DING Ding LIANG Ji-bei WANG Zhan-guo ZHU Zuo-ming LI Guo-hua 《Chinese Physics Letters》 SCIE CAS CSCD 1999年第4期298-300,共3页
Red-emitting at about 640nm from self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown on GaAs substrate by molecular beam epitaxy are demonstrated.A doublepeak structure of photoluminescence(PL)spectra from q... Red-emitting at about 640nm from self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown on GaAs substrate by molecular beam epitaxy are demonstrated.A doublepeak structure of photoluminescence(PL)spectra from quantum dots was observed,and a bimodal distribution of dot sizes was also confirmed by an atomic force micrograph(AFM)image for uncapped sample.From the temperature and excitation intensity dependence of PL spectra,it is found that the double-peak structure of PL spectra from quantum dots is strongly correlated to the two predominant quantum dot families.Taking into account the quantum-size effect on the peak energy,it is proposed that the high(low)energy peak results from a smaller(larger)dot family,and this result is identical to the statistical distribution of dot lateral size from the AFM image. 展开更多
关键词 MODAL SIZES distribution
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A Transition Phase in the Transformation fromα-,β-andε-toδ-Bismuth Oxide
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作者 DENG Hong-Yan HAO Wei-Chang xu huai-zhe 《Chinese Physics Letters》 SCIE CAS CSCD 2011年第5期187-190,共4页
As an important functional material,Bi_(2)O_(3)is found in seven polymorphs.We systematically analyze the transformation fromα-,β-andε-toδ-Bi_(2)O_(3)by using crystallographic group theory and structural simulatio... As an important functional material,Bi_(2)O_(3)is found in seven polymorphs.We systematically analyze the transformation fromα-,β-andε-toδ-Bi_(2)O_(3)by using crystallographic group theory and structural simulations.A transition phase is proved to exist in the transformation from theα-,β-andε-Bi_(2)O_(3)toδ-Bi2 Os.The transition phase is supposed to be tetragonal phase Bi_(2)O_(2.7)(Z=2)with the 139th I 4/m 2/m 2/m space group. 展开更多
关键词 TRANSFORMATION TRANSFORMATION TRANSITION
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Lateral Ordered InGaAs Self-organized Quantum Dots Grown on (311) GaAs by Conventional Molecular Beam Epitaxy
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作者 xu huai-zhe JIANG Wei-hong +2 位作者 xu Bo ZHOU Wei WANG Zhan-guo 《Chinese Physics Letters》 SCIE CAS CSCD 1999年第1期68-70,共3页
Self-assembled In_(x)Ga_(l-x)As quantum dots(QDs)on(311)and(100)GaAs surfaces have been grown by conventional solid source molecular beam epitaxy.Spontaneously ordering alignment of In_(x)Ga_(l-x)As QDs with lower In ... Self-assembled In_(x)Ga_(l-x)As quantum dots(QDs)on(311)and(100)GaAs surfaces have been grown by conventional solid source molecular beam epitaxy.Spontaneously ordering alignment of In_(x)Ga_(l-x)As QDs with lower In content around 0.3 has been observed on As-terminated(B type)surfaces.The direction of alignment orientation of the QDs formation differs from the direction of misorientation of the(311)B surface,and is strongly dependent upon the In content x.The ordering alignment becomes significantly deteriorated as the In content is increased to above 0.5 or as the QDs are formed on(100)and(311)Ga-terminated(A type)substrates. 展开更多
关键词 EPITAXY ALIGNMENT
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