Defects play vital roles in tailoring structures and properties of materials including the atomically thin two-dimensional(2D)materials,and increasing demands are requested to find effective ways to realize the defect...Defects play vital roles in tailoring structures and properties of materials including the atomically thin two-dimensional(2D)materials,and increasing demands are requested to find effective ways to realize the defect engineering,i.e.,tuning the defects and thus the materials’structure–property in a well-controlled way.Herein,we propose a novel method to tune the structures and configurations of one-dimensional(1D)line defects in monolayer MoS2 via mass transport induced structural transformation.By using atomic-resolved annular dark-field scanning transmission electron microscopy(ADF-STEM),we demonstrate in situ that sulfur vacancy line defect can be healed locally into defect-free MoS_(2)lattice via the desorption of Mo atoms from vacancy lines and adsorption into a moving Mo cluster.Furthermore,directional transport of Mo atoms(or Mo cluster)along the sulfur vacancy lines can induce the formation of Mo chains.Such a mass transport induced defect tuning provides more operational routes for the rational defect designing and property tuning in MoS_(2)as well as other related 2D materials.展开更多
基金This work done in Hangzhou was financially supported by the National Natural Science Foundation of China(Nos.51772265,5171165024 and 61721005)Zhejiang Provincial Nature Science Foundation(No.D19E020002)+5 种基金the Program of the Ministry of Education of China for Introducing Talents of Discipline to Universities(No.B16042)This work done in Beijing was financially supported by the Ministry of Science and Technology(MOST)of China(No.2018YFE0202700)the National Natural Science Foundation of China(Nos.11974422,61674171,11622437,and 61761166009)the Strategic Priority Research Program of Chinese Academy of Sciences(No.XDB30000000)the Fundamental Research Funds for the Central Universities of China and the Research Funds of Renmin University of China(Nos.16XNLQ01,19XNLG11,19XNQ025(W.J.))We thank Chunxia Yang for kindly providing us high-quality CVD-grown MoS2 samples.Calculations were performed at the Physics Lab of High-Performance Computing of Renmin University of China and Shanghai Supercomputer Center.The work on electron microscopy was done at the Center for Electron Microscopy of Zhejiang University.
文摘Defects play vital roles in tailoring structures and properties of materials including the atomically thin two-dimensional(2D)materials,and increasing demands are requested to find effective ways to realize the defect engineering,i.e.,tuning the defects and thus the materials’structure–property in a well-controlled way.Herein,we propose a novel method to tune the structures and configurations of one-dimensional(1D)line defects in monolayer MoS2 via mass transport induced structural transformation.By using atomic-resolved annular dark-field scanning transmission electron microscopy(ADF-STEM),we demonstrate in situ that sulfur vacancy line defect can be healed locally into defect-free MoS_(2)lattice via the desorption of Mo atoms from vacancy lines and adsorption into a moving Mo cluster.Furthermore,directional transport of Mo atoms(or Mo cluster)along the sulfur vacancy lines can induce the formation of Mo chains.Such a mass transport induced defect tuning provides more operational routes for the rational defect designing and property tuning in MoS_(2)as well as other related 2D materials.