MoN was prepared by rare earth Gd thermaldiffused permeation method via solid–gas interface reaction using（NH_4）_4[NiMo6O_24H_6]·7H_2O（abbreviated as NiMo6） as the precursor. Thermo-gravimetric differential ...MoN was prepared by rare earth Gd thermaldiffused permeation method via solid–gas interface reaction using（NH_4）_4[NiMo6O_24H_6]·7H_2O（abbreviated as NiMo6） as the precursor. Thermo-gravimetric differential thermal analysis（TG–DTA） was used to study the product＇s stability. The results of X-ray diffractometer（XRD）and X-ray photoelectron spectroscopy（XPS） indicate that a new hexagonal crystal MoN forms after the rare earth gas permeation and Gd3＋are diffused as substitution ions into the crystal lattice of MoN, and the surface valence of elemental content was measured by XPS. The conductivity results by direct current（DC） four-probe method show that MoN obtained from the Gd thermal permeation exhibits conductor character in the temperature range of 298–740 K and semiconductor behavior in 740–800 K.展开更多
基金financially supported by National Natural Science Foundation of China (No. 51272163, No. 51274143)
文摘MoN was prepared by rare earth Gd thermaldiffused permeation method via solid–gas interface reaction using（NH_4）_4[NiMo6O_24H_6]·7H_2O（abbreviated as NiMo6） as the precursor. Thermo-gravimetric differential thermal analysis（TG–DTA） was used to study the product＇s stability. The results of X-ray diffractometer（XRD）and X-ray photoelectron spectroscopy（XPS） indicate that a new hexagonal crystal MoN forms after the rare earth gas permeation and Gd3＋are diffused as substitution ions into the crystal lattice of MoN, and the surface valence of elemental content was measured by XPS. The conductivity results by direct current（DC） four-probe method show that MoN obtained from the Gd thermal permeation exhibits conductor character in the temperature range of 298–740 K and semiconductor behavior in 740–800 K.
