Design and simulation of a silicon-based hybrid integrated optical gyroscope system

By combining a silicon-based lithium niobate modulator and a silicon-based Si3N4resonator with silicon-based photonics technology,a highly systematic design of a hybrid integrated optical gyroscope with enhanced reciprocity sensitivity and a dual micro-ring structure is proposed for the first time in this paper.The relationship between the device's structural parameters and optical performance is also analyzed by constructing a complete simulation link,which provides a theoretical design reference to improve the system's sensitivity.When the wavelength is 1550 nm,the conversion frequency of the dual-ring optical path is 50 MHz,the coupling coefficient is 0.2,and the radius R is 1000μm,the quality factor of the silicon-based Si_(3)N_(4)resonator is 2.58×10^(5),which is 1.58 times that of the silicon-on-insulator resonator.Moreover,the effective number of times the light travels around the ring before leaving the micro-ring is 5.93,which is 1.62 times that of the silicon-on-insulator resonator.The work fits the gyro dynamic output diagram,and solves the problem of low sensitivity at low speed by setting the phase offset.This results provide a basis for the further optimization of design and chip processing of the integrated optical gyroscope.

Interface effect on superlattice quality and optical properties of InAs/GaSb type-Ⅱ superlattices grown by molecular beam epitaxy

We systematically investigate the influence of InSb interface(IF)engineering on the crystal quality and optical properties of strain-balanced InAs/GaSb type-Ⅱsuperlattices(T2SLs).The type-Ⅱsuperlattice structure is 120 periods InAs(8 ML)/GaSb(6 ML)with different thicknesses of InSb interface grown by molecular beam epitaxy(MBE).The highresolution x-ray diffraction(XRD)curves display sharp satellite peaks,and the narrow full width at half maximum(FWHM)of the 0th is only 30-39 arcsec.From high-resolution cross-sectional transmission electron microscopy(HRTEM)characterization,the InSb heterointerfaces and the clear spatial separation between the InAs and GaSb layers can be more intuitively distinguished.As the InSb interface thickness increases,the compressive strain increases,and the surface“bright spots”appear to be more apparent from the atomic force microscopy(AFM)results.Also,photoluminescence(PL)measurements verify that,with the increase in the strain,the bandgap of the superlattice narrows.By optimizing the InSb interface,a high-quality crystal with a well-defined surface and interface is obtained with a PL wavelength of 4.78μm,which can be used for mid-wave infrared(MWIR)detection.