Optical study of magnetic topological insulator MnBi_(4)Te_7

We present an infrared spectroscopy study of the magnetic topological insulator MnBi_(4)Te_7 with antiferromagnetic(AFM) order below the Neel temperature TN= 13 K. Our investigation reveals that the low-frequency optical conductivity consists of two Drude peaks, indicating a response of free carriers involving multiple bands. Interestingly, the narrow Drude peak grows strongly as the temperature decreases, while the broad Drude peak remains relatively unchanged. The onset of interband transitions starts around 2000 cm^(-1), followed by two prominent absorption peaks around 10000 cm^(-1) and 20000 cm^(-1). Upon cooling, there is a notable transfer of spectral weight from the interband transitions to the Drude response. Below TN, the AFM transition gives rise to small anomalies of the charge response due to a band reconstruction.These findings provide valuable insights into the interplay between magnetism and the electronic properties in MnBi_(4)Te_7.

Optical investigation of topological semimetal SrMnSb_2

We investigate the temperature-dependent infrared spectroscopy of SrMnSb_2, which is a semimetal with multiple Fermi surfaces. A notable blue shift of the plasma minimum in reflectivity upon cooling indicates that the carrier density varies with temperature. In the real part of the optical conductivity σ_1(ω), a linearly-increased component which extrapolates to zero conductivity at finite frequency has been identified, which suggests dispersion of gapped Dirac band structures near the Fermi level. A two-Drude model, representing two different types of carriers, is introduced to describe the real part of optical conductivity. We separate the contributions of two-Drude model in dc conductivity, and demonstrate that the transport properties of SrMnSb_2 are mainly affected by the narrow-Drude quasiparticles. Compared with the similar phenomena observed in CaMnSb_2 and SrMnBi_2, we can infer that the two-Drude model is an appropriate approach to investigate the multiband materials in AMnSb_2 and AMnBi_2 families.

Wire network behavior of superconducting films with lower symmetrical mesoscopic hole arrays

Superconducting films with the same hole density but different geometric symmetry have been designed and fabricated. The R(H) curves show obvious periodic oscillations with several dips at fractional matching fields. It is found that the period of the oscillations in the low field is not necessary equal to that derived from the hole density, but consistent with that from the corresponding wire networks when the large disk-like film regions are regarded as nodes. The experimental results of R(H), T_(c)(H) and j_(c)(H) at fractional matching fields within the first oscillation also support the rationality of considering films with large-diametered hole arrays as wire networks. Our results demonstrate that the connectivity of superconducting films with large-diametered hole arrays plays a more important role in the oscillations of R(H) curves.

Dynamic vortex Mott transition in triangular superconducting arrays

The proximity-coupled superconducting island arrays on a metallic film provide an ideal platform to study the phase transition of vortex states under mutual interactions between the vortex and potential landscape. We have developed a topdown microfabrication process for Nb island arrays on Au film by employing an Al hard mask. A current-induced dynamic vortex Mott transition has been observed under the perpendicular magnetic fields of f magnetic flux quantum per unit cell,which is characterized by a dip-to-peak reversal in differential resistance dV/dI vs. f curve with the increasing current.The dV/dI vs. I characteristics show a scaling behavior near the magnetic fields of f = 1/2 and f = 1, with the critical exponents ε of 0.45 and 0.3, respectively, suggesting different universality classes at these two fields.

Continuously Doping Bi_(2)Sr_(2)CaCu_(2)O_(8+δ)into Electron-Doped Superconductor by CaH_(2)Annealing Method

As a typical hole-doped cuprate superconductor,Bi_(2)Sr_(2)CaCu_(2)O_(8+δ)(Bi2212)carrier doping is mostly determined by its oxygen content.Traditional doping methods can regulate its doping level within the range of hole doping.Here we report the first application of CaH_(2)annealing method in regulating the doping level of Bi2212.By continuously controlling the anneal time,a series of differently doped samples can be obtained.The combined experimental results of x-ray diffraction,scanning transmission electron microscopy,resistance and Hall measurements demonstrate that the CaH_(2)induced topochemical reaction can effectively change the oxygen content of Bi2212 within a very wide range,even switching from hole doping to electron doping.We also found evidence of a low-T_c superconducting phase in the electron doping side.