Lateralβ-Ga_(2)O_(3)Schottky barrier diodes(SBDs)each are fabricated on an unintentionally doped(-201)n-typeβ-Ga_(2)O_(3)single crystal substrate by designing L-shaped electrodes.By introducing sidewall electrodes o...Lateralβ-Ga_(2)O_(3)Schottky barrier diodes(SBDs)each are fabricated on an unintentionally doped(-201)n-typeβ-Ga_(2)O_(3)single crystal substrate by designing L-shaped electrodes.By introducing sidewall electrodes on both sides of the conductive channel,the SBD demonstrates a high current density of 223 mA/mm and low specific on-resistance of4.7 mΩ·cm^(2).Temperature-dependent performance is studied and the Schottky barrier height is extracted to be in a range between 1.3 eV and 1.35 eV at temperatures ranging from 20℃to 150℃.These results suggest that the lateralβ-Ga_(2)O_(3)SBD has a tremendous potential for future power electronic applications.展开更多
Germanium waveguide photodetectors with 4μm widths and various lengths are fabricated on silicon-on-insulator substrates by selective epitaxial growth.The dependence of the germanium layer length on the responsivit.y...Germanium waveguide photodetectors with 4μm widths and various lengths are fabricated on silicon-on-insulator substrates by selective epitaxial growth.The dependence of the germanium layer length on the responsivit.y and bandwidth of the photodetectors is studied.The optimal length of the germanium layer to achieve high bandwidth is found to be approximately 8μm.For the 4×8μm^2 photodetector,the dark current density is as low as 5 mA/cm^2 at^-1 V.At a bias of-1 V,the 1550 nm optical responsivity is as high as 0.82 A/W.Bandwidth as high as 29 GHz is obtained at-4 V.Clear opened eye diagrams at 50 Gbits/s are demonstrated at 1550 nm.展开更多
基金Project supported by the National Key Research and Development Program of China(Grant No.2018 YFB 2200500)the National Natural Science Foundation of China(Grant Nos.62050073,62090054,and 61975196)the Key Research Program of Frontier Sciences,Chinese Academy of Sciences(Grant No.QYZDY-SSW-JSC022)。
文摘Lateralβ-Ga_(2)O_(3)Schottky barrier diodes(SBDs)each are fabricated on an unintentionally doped(-201)n-typeβ-Ga_(2)O_(3)single crystal substrate by designing L-shaped electrodes.By introducing sidewall electrodes on both sides of the conductive channel,the SBD demonstrates a high current density of 223 mA/mm and low specific on-resistance of4.7 mΩ·cm^(2).Temperature-dependent performance is studied and the Schottky barrier height is extracted to be in a range between 1.3 eV and 1.35 eV at temperatures ranging from 20℃to 150℃.These results suggest that the lateralβ-Ga_(2)O_(3)SBD has a tremendous potential for future power electronic applications.
基金Supported by the National Key Research and Development Program of China(Grant No.2017YFA0206404)the National Natural Science Foundation of China(Grant Nos.61435013,61534005,61534004,61604146,and 61774143)+1 种基金the Key Research Program of Frontier Sciences,CAS(Grant No.QYZDY-SSW-JSC022)the Beijing Education Commission Project(Grant No.SQKM201610005008)。
文摘Germanium waveguide photodetectors with 4μm widths and various lengths are fabricated on silicon-on-insulator substrates by selective epitaxial growth.The dependence of the germanium layer length on the responsivit.y and bandwidth of the photodetectors is studied.The optimal length of the germanium layer to achieve high bandwidth is found to be approximately 8μm.For the 4×8μm^2 photodetector,the dark current density is as low as 5 mA/cm^2 at^-1 V.At a bias of-1 V,the 1550 nm optical responsivity is as high as 0.82 A/W.Bandwidth as high as 29 GHz is obtained at-4 V.Clear opened eye diagrams at 50 Gbits/s are demonstrated at 1550 nm.
