Reducing the Schottky barrier height(SBH)and even achieving the transition from Schottky contacts to Ohmic contacts are key challenges of achieving high energy efficiency and high-performance power devices.In this pap...Reducing the Schottky barrier height(SBH)and even achieving the transition from Schottky contacts to Ohmic contacts are key challenges of achieving high energy efficiency and high-performance power devices.In this paper,the modulation effects of biaxial strain on the electronic properties and Schottky barrier of Mo Si_(2)N_(4)(MSN)/graphene and WSi_(2)N_(4)(WSN)/graphene heterojunctions are examined by using first principles calculations.After the construction of heterojunctions,the electronic structures of MSN,WSN,and graphene are well preserved.Herein,we show that by applying suitable external strain to a heterojunction stacked by MSN or WSN—an emerging two-dimensional(2D)semiconductor family with excellent mechanical properties—and graphene,the heterojunction can be transformed from Schottky ptype contacts into n-type contacts,even highly efficient Ohmic contacts,making it of critical importance to unleash the tremendous potentials of graphene-based van der Waals(vd W)heterojunctions.Not only are these findings invaluable for designing high-performance graphene-based electronic devices,but also they provide an effective route to realizing dynamic switching either between n-type and p-type Schottky contacts,or between Schottky contacts and Ohmic contacts.展开更多
基金Project supported by the Industry and Education Combination Innovation Platform of Intelligent Manufacturing and Graduate Joint Training Base at Guizhou University,China(Grant No.2020-52000083-01-324061)the National Natural Science Foundation of China(Grant No.61264004)the High-level Creative Talent Training Program in Guizhou Province,China(Grant No.[2015]4015)。
文摘Reducing the Schottky barrier height(SBH)and even achieving the transition from Schottky contacts to Ohmic contacts are key challenges of achieving high energy efficiency and high-performance power devices.In this paper,the modulation effects of biaxial strain on the electronic properties and Schottky barrier of Mo Si_(2)N_(4)(MSN)/graphene and WSi_(2)N_(4)(WSN)/graphene heterojunctions are examined by using first principles calculations.After the construction of heterojunctions,the electronic structures of MSN,WSN,and graphene are well preserved.Herein,we show that by applying suitable external strain to a heterojunction stacked by MSN or WSN—an emerging two-dimensional(2D)semiconductor family with excellent mechanical properties—and graphene,the heterojunction can be transformed from Schottky ptype contacts into n-type contacts,even highly efficient Ohmic contacts,making it of critical importance to unleash the tremendous potentials of graphene-based van der Waals(vd W)heterojunctions.Not only are these findings invaluable for designing high-performance graphene-based electronic devices,but also they provide an effective route to realizing dynamic switching either between n-type and p-type Schottky contacts,or between Schottky contacts and Ohmic contacts.
