Carbon nitride thin films have been synthesized on polycrystalline Pt substrates using microwave plasma chemical vapor de- position (MPCVD) technique. The N/C atomic ratio is close to the stoichiometric value 1.33 of ...Carbon nitride thin films have been synthesized on polycrystalline Pt substrates using microwave plasma chemical vapor de- position (MPCVD) technique. The N/C atomic ratio is close to the stoichiometric value 1.33 of C_3N_4. The experimental X-ray diffraction spectra contain all the strong peaks of α-C_3N_4 and β -C_3N_4. The films are a mixture of α-C_3N_4 and β -C_3N_4. The observed Raman and FT- IR spectra support the existence of C-N covalent bond in carbon nitride compound. The bulk modulus detected by Nano II nanoindentor is up to 349 GPa.展开更多
Crystalline carbon nitride thin films were prepared on Si (100) substrates by a microwave plasma chemical vapor deposition method, using CH4/N2 as precursor gases. The surface morphologies of the carbon nitride films ...Crystalline carbon nitride thin films were prepared on Si (100) substrates by a microwave plasma chemical vapor deposition method, using CH4/N2 as precursor gases. The surface morphologies of the carbon nitride films deposited on Si substrate at 830℃ are consisted of hexagonal crystalline rods. The effect of substrate temperature on the formation of carbon nitrides was investigated. X-ray photoelectron spectroscopy analysis indicated that the maximum value of N/C in atomic ratio in the films deposited at a substrate temperature of 830℃ is 1 .20, which is close to the stoichiometric value of C3N4. The X-ray diffraction pattern of the films deposited at 830℃ indicates no amorphous phase in the films, which are composed of β- and α-C3N4 phase containing an unidentified C-N phase. Fourier transform infrared spectroscopy supports the existence of C-N covalent bond.展开更多
文摘Carbon nitride thin films have been synthesized on polycrystalline Pt substrates using microwave plasma chemical vapor de- position (MPCVD) technique. The N/C atomic ratio is close to the stoichiometric value 1.33 of C_3N_4. The experimental X-ray diffraction spectra contain all the strong peaks of α-C_3N_4 and β -C_3N_4. The films are a mixture of α-C_3N_4 and β -C_3N_4. The observed Raman and FT- IR spectra support the existence of C-N covalent bond in carbon nitride compound. The bulk modulus detected by Nano II nanoindentor is up to 349 GPa.
基金financed by the National NatUral Science Foundation of China(Grant No.19674009)Beijing Laboratory of Vacuum Physics,Chinese Academy of Sciences.
文摘Crystalline carbon nitride thin films were prepared on Si (100) substrates by a microwave plasma chemical vapor deposition method, using CH4/N2 as precursor gases. The surface morphologies of the carbon nitride films deposited on Si substrate at 830℃ are consisted of hexagonal crystalline rods. The effect of substrate temperature on the formation of carbon nitrides was investigated. X-ray photoelectron spectroscopy analysis indicated that the maximum value of N/C in atomic ratio in the films deposited at a substrate temperature of 830℃ is 1 .20, which is close to the stoichiometric value of C3N4. The X-ray diffraction pattern of the films deposited at 830℃ indicates no amorphous phase in the films, which are composed of β- and α-C3N4 phase containing an unidentified C-N phase. Fourier transform infrared spectroscopy supports the existence of C-N covalent bond.
