31.38 Gb/s GaN-based LED array visible light communication system enhanced with V-pit and sidewall quantum well structure

Although the 5G wireless network has made significant advances,it is not enough to accommodate the rapidly rising requirement for broader bandwidth in post-5G and 6G eras.As a result,emerging technologies in higher frequencies including visible light communication(VLC),are becoming a hot topic.In particular,LED-based VLC is foreseen as a key enabler for achieving data rates at the Tb/s level in indoor scenarios using multi-color LED arrays with wavelength division multiplexing(WDM)technology.This paper proposes an optimized multi-color LED array chip for high-speed VLC systems.Its long-wavelength GaN-based LED units are remarkably enhanced by V-pit structure in their efficiency,especially in the“yellow gap”region,and it achieves significant improvement in data rate compared with earlier research.This work investigates the V-pit structure and tries to provide insight by introducing a new equivalent circuit model,which provides an explanation of the simulation and experiment results.In the final test using a laboratory communication system,the data rates of eight channels from short to long wavelength are 3.91 Gb/s,3.77 Gb/s,3.67 Gb/s,4.40 Gb/s,3.78 Gb/s,3.18 Gb/s,4.31 Gb/s,and 4.35 Gb/s(31.38 Gb/s in total),with advanced digital signal processing(DSP)techniques including digital equalization technique and bit-power loading discrete multitone(DMT)modulation format.

Flexible 2 × 2 multiple access visible light communication system based on an integrated parallel GaN/InGaN micro-photodetector array module

In recent studies, visible light communication(VLC) has been predicted to be a prospective technique in the future 6G communication systems. To suit the trend of exponentially growing connectivity, researchers have intensively studied techniques that enable multiple access(MA) in VLC systems, such as the MIMO system based on LED devices to support potential applications in the Internet of Things(IoT) or edge computing in the nextgeneration access network. However, their transmission rate is limited due to the intrinsic bandwidth of LED.Unfortunately, the majority of visible light laser communication (VLLC) research with beyond 10 Gb/s data rates concentrates on point-to-point links, or using discrete photodetector(PD) devices instead of an integrated array PD. In this paper, we demonstrated an integrated PD array device fabricated with a Si-substrated GaN/InGaN multiple-quantum-well(MQW) structure, which has a 4 × 4 array of 50 μm × 50 μm micro-PD units with a common cathode and anode. This single-integrated array successfully provides access for two different transmitters simultaneously in the experiment, implementing a 2 × 2 MIMO-VLLC link at 405 nm. The highest data rate achieved is 13.2 Gb/s, and the corresponding net data rate(NDR) achieved is 12.27 Gb/s after deducing the FEC overhead, using 2.2 GHz bandwidth and superposed PAM signals. Furthermore, we assess the Huffman-coded coding scheme, which brings a fine-grain adjustment in access capacity and enhances the overall data throughput when the user signal power varies drastically due to distance, weather, or other challenges in the channel condition. As far as we know, this is the first demonstration of multiple visible light laser source access based on a single integrated GaN/InGaN receiver module.