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Freestanding Pt nanosheets with high porosity and improved electrocatalytic performance toward the oxygen reduction reaction 被引量:1
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作者 Chuang Fan Zihan huang +5 位作者 xianyu hu Zhaoping Shi Tianyang Shen Yawen Tang Xiaojun Wang Lin Xu 《Green Energy & Environment》 SCIE 2018年第4期310-317,共8页
Because of the intriguing electronic properties, high specific surface areas and confinement effect, two-dimensional(2D) noble metal nanosheets usually exhibit fascinating physicochemical properties and thus hold grea... Because of the intriguing electronic properties, high specific surface areas and confinement effect, two-dimensional(2D) noble metal nanosheets usually exhibit fascinating physicochemical properties and thus hold great promises in fuel cell devices and beyond. Herein, 2D porous Pt nanosheets composed by interweaved ultrathin nanowires are successfully fabricated via a facile NaCl-templated process. Controlled experiments demonstrate that the adoption of NaCl and appropriate ratio of NaCl and Pt precursor are indispensable for the formation of porous Pt nanosheets. Impressively, the cost-effective NaCl template can be recyclable through a simple recrystallization procedure, which may greatly reduce the synthetic cost. By virtue of their structural merits, including high porosity, 2D anisotropy and abundant defects, the resultant porous Pt nanosheets exhibit superior activity and enhanced stability towards the oxygen reduction reaction(ORR) compared to the commercial Pt black in alkaline medium. The present study not only offers a high-performance electrocatalyst for fuel cell devices, but also provides a new perspective toward the rational synthesis of 2D noble metal nanosheets with high porosity and diverse functionalities. 展开更多
关键词 PLATINUM NACL TEMPLATE POROUS NANOSHEETS Oxygen reduction reaction
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Controlled growth of two-dimensional InAs single crystals via van der Waals epitaxy 被引量:1
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作者 Jiuxiang Dai Teng Yang +8 位作者 Zhitong Jin Yunlei Zhong xianyu hu Jingyi Zou Weigao Xu Tao Li Yuxuan Lin Xu Zhang Lin Zhou 《Nano Research》 SCIE EI CSCD 2022年第11期9954-9959,共6页
Two-dimensional(2D)indium arsenide(InAs)is promising for future electronic and optoelectronic applications such as highperformance nanoscale transistors,flexible and wearable devices,and high-sensitivity broadband pho... Two-dimensional(2D)indium arsenide(InAs)is promising for future electronic and optoelectronic applications such as highperformance nanoscale transistors,flexible and wearable devices,and high-sensitivity broadband photodetectors,and is advantageous for its heterogeneous integration with Si-based electronics.However,the synthesis of 2D InAs single crystals is challenging because of the nonlayered structure.Here we report the van der Waals epitaxy of 2D InAs single crystals,with their thickness down to 4.8 nm,and their lateral sizes up to~37μm.The as-grown InAs flakes have high crystalline quality and are homogenous.The thickness can be tuned by growth time and temperature.Moreover,we explore the thickness-dependent optical properties of InAs flakes.Transports measurement reveals that 2D InAs possesses high conductivity and high carrier mobility.Our work introduces InAs to 2D materials family and paves the way for applying 2D InAs in high-performance electronics and optoelectronics. 展开更多
关键词 two-dimensional materials van der Waals epitaxy indium arsenide nonlayered material
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