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High power semiconductor laser array with single-mode emission
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作者 Peng Jia Zhi-Jun Zhang +10 位作者 Yong-Yi Chen Zai-Jin Li Li Qin Lei Liang Yu-Xin Lei Cheng Qiu Yue Song xiao-nan shan Yong-Qiang Ning Yi Qu Li-Jun Wang 《Chinese Physics B》 SCIE EI CAS CSCD 2022年第5期360-363,共4页
The semiconductor laser array with single-mode emission is presented in this paper.The 6-μm-wide ridge waveguides(RWGs)are fabricated to select the lateral mode.Thus the fundamental mode of laser array can be obtaine... The semiconductor laser array with single-mode emission is presented in this paper.The 6-μm-wide ridge waveguides(RWGs)are fabricated to select the lateral mode.Thus the fundamental mode of laser array can be obtained by the RWGs.And the maximum output power of single-mode emission can reach 36 W at an injection current of 43 A,after that,a kink will appear.The slow axis(SA)far-field divergence angle of the unit is 13.65.The beam quality factor M;of the units determined by the second-order moment(SOM)method,is 1.2.This single-mode emission laser array can be used for laser processing. 展开更多
关键词 semiconductor laser arrays SINGLE-MODE high power high beam quality
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