The transient dynamics of anisotropic properties of Ga As was systematically studied by polarization-dependent ultrafast time-resolved transient absorption.Our findings revealed that the anisotropy of reflectivity was...The transient dynamics of anisotropic properties of Ga As was systematically studied by polarization-dependent ultrafast time-resolved transient absorption.Our findings revealed that the anisotropy of reflectivity was enhanced in both pump-induced and probe-induced processes,suggesting an extraordinary resonance absorption of photon-phonon coupling(PPC)with intrinsic anisotropic characteristic in carrier relaxation,regardless of the concrete crystallinity and orientation of GaAs sample.The results,delivering in-depth cognition about the polarization-dependent ultrafast carrier dynamics,also proved the paramount importance of interaction between polarized laser and semiconductor.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.51875006 and 51705009)。
文摘The transient dynamics of anisotropic properties of Ga As was systematically studied by polarization-dependent ultrafast time-resolved transient absorption.Our findings revealed that the anisotropy of reflectivity was enhanced in both pump-induced and probe-induced processes,suggesting an extraordinary resonance absorption of photon-phonon coupling(PPC)with intrinsic anisotropic characteristic in carrier relaxation,regardless of the concrete crystallinity and orientation of GaAs sample.The results,delivering in-depth cognition about the polarization-dependent ultrafast carrier dynamics,also proved the paramount importance of interaction between polarized laser and semiconductor.