Halogenated Thermally Activated Delayed Fluorescence Materials for Efficient Scintillation

Organic scintillators,materials with the ability to exhibit luminescence when exposed to X-rays,have aroused increasing interest in recent years.However,the enhancement of radioluminescence and improving X-ray absorption of organic scintillators lie in the inherent dilemma,due to the waste of triplet excitons and weak X-ray absorption during scintillation.Here,we employ halogenated thermally activated delayed fluorescence materials to improve the triplet exciton utilization and X-ray absorption simultaneously,generating efficient scintillation with a low detection limit,which is one order of magnitude lower than the dosage for X-ray medical diagnostics.Through experimental study and theoretical calculation,we reveal the positive role of X-ray absorption,quantum yields of prompt fluorescence,and intersystem crossing in promoting the radioluminescence intensity.This finding offers an opportunity to design diverse types of organic scintillators and expands the applications of thermally activated delayed fluorescence.

Manipulating intermolecular interactions for ultralong organic phosphorescence

Ultralong organic phosphorescence(UOP)materials have received considerable attention in the field of organic optoelectronics due to their long lifetime,high exciton utilization,large Stokes shift,and so on.Great advancements have been achieved through manipulating intermolecular interactions for high-performance UOP materials in recent years.This review will discuss the influence of various intermolecular interactions,includingπ-πinteractions,n-πinteractions,halogen bonding,hydrogen bonding,coordinative bonding,and ionic bonding on phosphorescent properties at room temperature,respectively.We summarize the rule of manipulating intermolecular interactions for UOP materials with superior phosphorescent properties.This review will provide a guideline for developing new UOP materials with superior phosphorescent properties for potential applications in organic electronics and bioelectronics.

Dynamic room-temperature phosphorescence by reversible transformation of photo-induced free radicals

Room-temperature phosphorescence(RTP)with a dynamic feature endows organic luminescent materials with promising application in optoelectronic fields.However,it remains a formidable challenge to obtain dynamic RTP materials.Herein,we reported a strategy for dynamic RTP via reversible transformation of radicals under external stimuli.RTP gradually disappeared with continuous UV-light irradiation owing to the conversion of NDIA to NDIA^(·-)in NDIA/PVA film,which can be recovered by oxidation with oxygen.Regarding the excellent reversibility and repeatability,the potential applications for round-the-clock anticounterfeiting and tag were first demonstrated.This finding not only outlines a principle to synthesize new RTP materials with dynamic behavior,but also expands the scope of applications of dynamic RTP materials.

Effect of mechanical force on domain switching in BiFeO3 ultrathin films

Ferroelectric polarization can be switched by an external applied electric field and may also be reversed by a mechanical force via flexoelectricity from the strain gradient.In this study,we report the mechanical writing of an epitaxial BiFeO3(BFO)thin film and the combined action of an applied mechanical force and electric field on domain switching,where the mechanical force and electric field are applied using the tip of atomic force microscopy.When the applied force exceeds the threshold value,the upward polarization of the BFO thin film can be reversed by pure mechanical force via flexoelectricity;when an electric field is simultaneously applied,the mechanical force can reduce the coercive electric field because both the piezoelectricity from the homogeneous strain and the flexoelectricity from strain gradient contribute to the internal electric field in the film.The mechanically switched domains exhibit a slightly lower surface potential when compared with that exhibited by the electrically switched domains due to no charge injection in the mechanical method.Furthermore,both the mechanically and electrically switched domains exhibit a tunneling electroresistance in the BFO ferroelectric tunnel junction.