High performance SiC trench-type MOSFET with an integrated MOS-channel diode

A novel SiC double-trench metal-oxide-semiconductor field effect transistor(MOSFET) with integrated MOS-channel diode is proposed and investigated by Sentaurus TCAD simulation. The new SiC MOSFET has a trench gate and a stepped-trench source, and features an integrated MOS-channel diode on the top sidewall of the source trench(MT MOS). In the reverse conduction state, the MOS-channel diode turns on firstly to prevent the internal parasitic body diode being activated, and thus reduces the turn-on voltage VFand suppresses the bipolar degradation phenomena. The VFof1.70 V(@Ids=-100 A/cm^(2)) for the SiC MT MOS is 38.2% lower than that of SiC double-trench MOSFET(DT MOS).Meanwhile, the reverse recovery charge Qrrof the MT MOS is 58.7% lower than that of the DT MOS at Iload= 700 A/cm^(2),and thus the reverse recovery loss is reduced. Furthermore, owing to the modulation effect induced by the double trenches,the MT MOS preserves the same superior forward conduction and blocking performance as those of DT MOS, with 22.9% and 18.2% improvement on breakdown voltage and RON,spcompared to the trench gate MOSFET with planar integrated SBD(ST MOS).

Experimental investigation on the instability for NiO/β-Ga_(2)O_(3) heterojunction-gate FETs under negative bias stress

A NiO/β-Ga_(2)O_(3) heterojunction-gate field effect transistor(HJ-FET)is fabricated and it_(s)instability mechanisms are exper-imentally investigated under different gate stress voltage(V_(G,s))and stress times(t_(s)).Two different degradation mechanisms of the devices under negative bias stress(NBS)are identified.At low V_(G,s)for a short t_(s),NiO bulk traps trapping/de-trapping elec-trons are responsible for decrease/recovery of the leakage current,respectively.At higher V_(G,s)or long t_(s),the device transfer char-acteristic curves and threshold voltage(V_(TH))are almost permanently negatively shifted.This is because the interface dipoles are almost permanently ionized and neutralize the ionized charges in the space charge region(SCR)across the heterojunction inter-face,resulting in a narrowing SCR.This provides an important theoretical guide to study the reliability of NiO/β-Ga_(2)O_(3) hetero-junction devices in power electronic applications.

Novel double channel reverse conducting GaN HEMT with an integrated MOS-channel diode

A novel normally-off double channel reverse conducting(DCRC)HEMT with an integrated MOS-channel diode(MCD)is proposed and investigated by TCAD simulation.The proposed structure has two features:one is double heterojunctions to form dual 2DEG channels named the 1^(st)path and the 2^(nd)path for reverse conduction,and the other is the MCD forming by the trench source metal,source dielectric,and Ga N.At the initial reverse conduction stage,the MCD acts as a switch to control the 1^(st)path which would be turned on prior to the 2^(nd)path.Because of the introduction of the 1^(st)path,the DCRC-HEMT has an additional reverse conducting channel to help enhance the reverse conduction performance.Compared with the conventional HEMT(Conv.HEMT),the DCRC-HEMT can obtain a low reverse turn-on voltage(VRT)and its VRTis independent of the gate-source bias(VGS)at the same time.The DCRC-HEMT achieves the VRTof 0.62 V,which is 59.7%and 75.9%lower than that of the Conv.HEMT at VGS=0 V and-1 V,respectively.In addition,the forward conduction capability and blocking characteristics almost remain unchanged.In the end,the key fabrication flows of DCRC-HEMT are presented.

A novel 4H-SiC trench MOSFET with double shielding structures and ultralow gate-drain charge

A new ultralow gate–drain charge(Q_(GD)) 4 H-SiC trench MOSFET is presented and its mechanism is investigated by simulation. The novel MOSFET features double shielding structures(DS-MOS): one is the grounded split gate(SG), the other is the P+shielding region(PSR). Both the SG and the PSR reduce the coupling effect between the gate and the drain, and transform the most part of the gate–drain capacitance(C_(GD)) into the gate–source capacitance(C_(GS)) and drain–source capacitance(C_(DS)) in series.Thus the C_(GD) is reduced and the proposed DS-MOS obtains ultralow Q_(GD). Compared with the double-trench MOSFET(DT-MOS)and the conventional trench MOSFET(CT-MOS), the proposed DS-MOS decreases the Q_(GD) by 85% and 81%, respectively.Moreover, the figure of merit(FOM), defined as the product of specific on-resistance(R_(on, sp)) and Q_(GD)(R_(on, sp)Q_(GD)), is reduced by 84% and 81%, respectively.

4H-SiC trench MOSFET with an integrated Schottky barrier diode and L-shaped P^+shielding region

A novel 4H-SiC trench MOSFET is presented and investigated by simulation in this paper.The device features an integrated Schottky barrier diode and an L-shaped P^+shielding region beneath the gate trench and aside one wall of the gate trench(S-TMOS).The integrated Schottky barrier diode works as a free-wheeling diode in reverse recovery and reverse conduction,which significantly reduces reverse recovery charge(Q_(rr))and reverse turn-on voltage(VF).The L-shaped P^+region effectively shields the coupling of gate and drain,resulting in a lower gate–drain capacitance(C_(gd))and date–drain charge(Q_(gd)).Compared with that of conventional SiC trench MOSFET(C-TMOS),the V_F and Q_(rr)of S-TMOS has reduced by 44%and 75%,respectively,with almost the same forward output current and reverse breakdown voltage.Moreover,the S-TMOS reduces Q_(gd)and C_(gd)by 32%and 22%,respectively,in comparison with C-TMOS.

有机质裂解的地压机制:数值模拟

自从二十世纪五十年代开始,烃类生成被认为是最重要的异常压力机制之一。烃类生成影响孔隙—压力演化:(1)通过固体干酪根向液态或气态烃类的转化增加孔隙流体的体积;(2)由于烃类在孔隙水中保持非混溶相,减少了沉积岩的渗透率。本文中,假定有机质分解的两个产物液态烃(石油〕和气态烃(甲烷)作为孔隙中的补充相存在于地层中,并成为评价这一压力机制有效性的基础。用一个简化的三步一级动力学反应模型模拟油气的生成。我们用两相水动力公式的盆地数值模拟计算有机质成熟对地压演化的影响。除了在岩石有机质含量比较大(>5%)的情况下,否则,石油生成没起重要作用,然而气的生成有很大影响。结果表明,在一定埋深下,油至气的裂解强烈地影响超压。随着岩石有机质含量增加,这一机制的作用变得更加重要。一些环境条件,像干酪根类型、温度梯度和岩石性质,不同程度地影响有机质成熟对超压发育的作用。

压实和水热增压对地压的作用以及环境条件的影响

异常压力的产生是由于过剩流体和排出沉积物的流体能量之间的不平衡,只有排出过剩的流体才能保持正常压实.影响地压的这两个因素,称为压实和水热增压,可根据联立方程解(主要有达西定理和Athy的孔隙度-深度关系式)采用水动力模式来研究.地压可在一维沉积剖面上计算,根据显著地影响过剩孔隙流体体积和沉积物渗透率的四种环境,定量的深入分析表明,在实际地质环境中,水热因素在异常压力出现时没有明显的实际意义.

A snapback-free and high-speed SOI LIGBT with double trenches and embedded fully NPN structure

A novel 600 V snapback-free high-speed silicon-on-insulator lateral insulated gate bipolar transistor is proposed and investigated by simulation.The proposed device features an embedded NPN structure at the anode side,and double trenches together with an N-type carrier storage(N-CS)layer at the cathode side,named DT-NPN LIGBT.The NPN structure not only acts as an electron barrier to eliminate the snapback effect in the on-state within a smaller cell pitch but also provides an extra electron extracting path during the turn-off stage to decrease the turnoff loss(E_(off)).The double cathode trenches and N-CS layer hinder the hole from being extracted by the cathode quickly.They then enhance carrier storing effect and lead to a reduced on-state voltage drop(V_(on)).The latch-up immunity is improved by the double cathode trenches.Hence,the DT-NPN LIGBT obtains a superior tradeoff between the V_(on)and E_(off).Additionally,the DT-NPN LIGBT exhibits an improved blocking capability and weak dependence of breakdown voltage(BV)on the P+anode doping concentration because the NPN structure suppresses triggering the PNP transistor.The proposed LIGBT reduces the E_(off)by 55%at the same V_(on),and improves the BV by 7.3%compared to the conventional LIGBT.

Analysis of Theoretical Basis of Direct Subsidies for Grain Production

Financial distribution to compensate grain production reflects governmental macro-control on grain production and supply. With the reference of agricultural basic theory,agricultural multi-function theory,economic externality theory,public finance and other theories,this article points out that direct subsidies for grain production is reasonable and necessary with six main theoretical basis,namely fundamentality,multi-function,positive externality of grain production,particularity of grain supply and demand,grain safety being closely linked with national security and basic function of service-oriented government.

Impact of chlorites on the wettability of tight oil sandstone reservoirs in the Upper Triassic Yanchang Formation,Ordos Basin,China

Wettability is an essential property of reservoirs that is of great importance for enhancing oil recovery(EOR)and oil migration.The wettability of reservoirs is generally believed to be strongly affected by mineral compositions but it is not always the case.An integrated study of petrography and wettability was carried out to determine the impact of chlorite minerals on the wettability of the sandstone reservoirs in the Upper Triassic Yanchang Formation.Chlorites are found to be commonly present in the reservoir sandstones as detrital grains,rim-shaped cements,and biotite-chloritized forms with the pore peripheries being largely coated by chlorite,which is the main mineral in direct contact with pores.At pore scale,the wetting state of chlorites can either be oil-wet or water-wet in the tight sandstone reservoirs depending on wettability alteration by oil charge.Chlorites in contact with pores occupy a large of proportions of oil-wet pore walls and are crucial for the formation of oil-wetting state of reservoir sandstones.At core scale,the contents of chlorites in direct contact with pores do not correlate well with the AmottHarvey index due to other factors such as heterogeneity,oil-bearing degrees of samples.