The thermal properties of a nanostructured semiconductor are affected by multi-physical fields,such as stress and electromagnetic fields,causing changes in temperature and strain distributions.In this work,the influen...The thermal properties of a nanostructured semiconductor are affected by multi-physical fields,such as stress and electromagnetic fields,causing changes in temperature and strain distributions.In this work,the influence of stress-dependent thermal conductivity on the heat transfer behavior of a GaN-based nanofilm is investigated.The finite element method is adopted to simulate the temperature distribution in a prestressed nanofilm under heat pulses.Numerical results demonstrate the effect of stress field on the thermal conductivity of GaN-based nanofilm,namely,the prestress and the thermal stress lead to a change in the heat transfer behavior in the nanofilm.Under the same heat source,the peak temperature of the film with stress-dependent thermal conductivity is significantly lower than that of the film with a constant thermal conductivity and the maximum temperature difference can reach 8.2 K.These results could be useful for designing GaN-based semiconductor devices with higher reliability under multi-physical fields.展开更多
基金This research is supported by the National Natural Science Foundation of China(Grant Nos.11772294,11621062)the Fundamental Research Funds for the Central Universities(Grant No.2017QNA4031).
文摘The thermal properties of a nanostructured semiconductor are affected by multi-physical fields,such as stress and electromagnetic fields,causing changes in temperature and strain distributions.In this work,the influence of stress-dependent thermal conductivity on the heat transfer behavior of a GaN-based nanofilm is investigated.The finite element method is adopted to simulate the temperature distribution in a prestressed nanofilm under heat pulses.Numerical results demonstrate the effect of stress field on the thermal conductivity of GaN-based nanofilm,namely,the prestress and the thermal stress lead to a change in the heat transfer behavior in the nanofilm.Under the same heat source,the peak temperature of the film with stress-dependent thermal conductivity is significantly lower than that of the film with a constant thermal conductivity and the maximum temperature difference can reach 8.2 K.These results could be useful for designing GaN-based semiconductor devices with higher reliability under multi-physical fields.
