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高迁移率二维半导体Bi_(2)O_(2)Se的化学气相沉积生长:可控生长及材料质量
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作者 于梦诗 谭聪伟 +2 位作者 高啸寅 唐浚川 彭海琳 《物理化学学报》 SCIE CAS CSCD 北大核心 2023年第10期75-89,共15页
高迁移率二维半导体材料具有独特的性质,可在原子级厚度下维持晶体管的尺寸微缩,抑制短沟道效应,被认为是“后摩尔时代”晶体管沟道的候选材料。作为二维半导体中的一员,环境稳定、带隙合适的Bi_(2)O_(2)Se备受关注。与其他二维材料不... 高迁移率二维半导体材料具有独特的性质,可在原子级厚度下维持晶体管的尺寸微缩,抑制短沟道效应,被认为是“后摩尔时代”晶体管沟道的候选材料。作为二维半导体中的一员,环境稳定、带隙合适的Bi_(2)O_(2)Se备受关注。与其他二维材料不同的是,Bi_(2)O_(2)Se可以通过逐层氧化成高介电常数的氧化物介电层,同时保持原子级平整的界面,这可与半导体产业界中的Si/SiO2相比拟。上述特性使Bi_(2)O_(2)Se成为构筑高性能电子、光电子器件的理想材料平台。为了实现二维Bi_(2)O_(2)Se的广泛应用,开发大面积、高质量、低成本的制备方法至关重要。在这篇综述中,我们总结了通过化学气相沉积方法控制二维Bi_(2)O_(2)Se生长的最新进展。我们首先介绍了Bi_(2)O_(2)Se的晶体结构和性质,而后,我们重点关注二维Bi_(2)O_(2)Se的形貌控制与规则阵列构筑,其中形貌控制包括成核模式的控制与维度控制。此外,我们探讨了通过控制缺陷和释放应力以提高Bi_(2)O_(2)Se电学质量的方法。最后,为满足先进电子应用的需求,我们提出了精确控制Bi_(2)O_(2)Se结构和质量的策略。 展开更多
关键词 Bi_(2)O_(2)Se 化学气相沉积 成核模式 维度 阵列 电学质量
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Ultrafast growth of wafer-scale fold-free bilayer graphene
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作者 Jilin Tang Yuechen Wang +17 位作者 Yuwei Ma xiaoyin gao Xin gao Ning Li Yani Wang Shishu Zhang Liming Zheng Bing Deng Rui Yan Yisen Cao Ronghua Zhang Lianming Tong Jin Zhang Peng gao Zhongfan Liu Xiaoding Wei Hongtao Liu Hailin Peng 《Nano Research》 SCIE EI CSCD 2023年第7期10684-10689,共6页
Bilayer graphene provides a versatile platform for exploring a variety of intriguing phenomena and shows much promise for applications in electronics,optoelectronics,etc.Controlled growth of large-area bilayer graphen... Bilayer graphene provides a versatile platform for exploring a variety of intriguing phenomena and shows much promise for applications in electronics,optoelectronics,etc.Controlled growth of large-area bilayer graphene is therefore highly desired yet still suffers from a slow growth rate and poor layer uniformity.Meanwhile,graphene wrinkles,including folds and ripples,form during cooling due to the thermal contraction mismatch between graphene and the metal substrates,and have been far from suppressed or eliminated,especially in bilayer graphene,which would greatly degrade the extraordinary properties of graphene.Here we report the ultrafast growth of wafer-scale fold-free bilayer graphene by chemical vapor deposition.Through well-tuning the alloy thickness and strain regulation of the single-crystal CuNi(111)/sapphire,the full coverage of a 2-inch fold-free bilayer graphene wafer via mainly isothermal segregation has been achieved as fast as 30 s.The tensile-strained CuNi(111)film reduces the thermal contraction mismatch and suppresses the formation of graphene folds during cooling,which is directly observed through in situ optical microscopy.The ultraflat bilayer graphene exhibits wafer-scale uniformity in electrical performance and enhanced mechanical property comparable to the exfoliated ones.Our results offer a promising route for largescale production of bilayer graphene and enable its various applications. 展开更多
关键词 bilayer graphene graphene wrinkles ultrafast growth in situ optical microscopy single crystal wafer
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