Highly selective adsorption of light hydrocarbons in a HKUST-like MOF constructed from spirobifluorene-based octacarboxylate ligand by a substitution strategy

Metal-organic frameworks(MOFs)with HKUST-like tbo structures have been paid specific attention for gas sorption and separation because of their specific pore features.According to the geometric similarity of spirobifluorene and[Cu_(2)(O_(2)CR)_(4)]paddlewheel secondary building units(Cu_(2)SBUs)in HKUST-1,we attempted to rationally construct a HKUST-like MOF by a substitution strategy.Using a judiciously designed octatopic carboxylate ligand,a copper-organic framework,JUC-220,was synthesized.The crystals of JUC-220 exhibited characteristic features in cubic with disorder,possibly due to the disorder substitution and high symmetry of tbo topology.Two related HKUST-like structure models were considered.Thanks to the suitable pore size and specific pore shapes,the adsorption selectivities of JUC-220 for C_(3)H_(8)/CH_(4)(5/85)and C_(2)H_(6)/CH_(4)(10/85)gas mixtures were as high as 736 and 46 respectively at 298 K and 1 bar.Specially,JUC-220 exhibited excellent trace adsorption performance of C_(3)H_(8)and C_(2)H_(6)as well as reverse adsorption behavior of C_(2)H_(6)/C_(2)H_(4).Thus,JUC-220 serves as an example of HKUST-like MOF with disorder for light hydrocarbons separation and the implementation of substitution which can be used to explore more porous MOFs.

Implementation of slow and smooth etching of GaN by inductively coupled plasma

Slow and smooth etching of gallium nitride（GaN） by BCl;/Cl;-based inductively coupled plasma（ICP）is investigated in this paper. The effects of etch parameters, including ICP power, radio frequency（RF） power, the flow rate of Cl;and BCl;, on GaN etch rate and etch surface roughness RMS are discussed. A new model is suggested to explain the impact mechanism of the BCl;flow rate on etch surface roughness. An optimized etch result of a slow and smooth etch surface was obtained; the etch rate and RMS were 0.36 ?/s and 0.9 nm, respectively.