Resistive switching （RS） behaviors of Dy2O3- based memory devices with and without Pt nanocrystals （Pt-nc） layer were investigated for nonvolatile memory applications. The Cu/Pt-nc/Dy2O3/Pt memory exhibits excelle...Resistive switching （RS） behaviors of Dy2O3- based memory devices with and without Pt nanocrystals （Pt-nc） layer were investigated for nonvolatile memory applications. The Cu/Pt-nc/Dy2O3/Pt memory exhibits excellent unipolar RS characteristics, including highly uniform switching parameters, lower switching voltage （〈1.2 V）, high resistance ratio （〉1 × 104）, a large number of switching cycles, as well as long retention time （〉1 × 105 s）, owing to the local electric field confined and strengthened near the nanocrystals＇ location.展开更多
The band alignment of HfO2 film on p-type （100） InP substrate grown by magnetron sputtering was investigated.The chemical states and bonding characteristics of the system were characterized by X-ray photoelectron sp...The band alignment of HfO2 film on p-type （100） InP substrate grown by magnetron sputtering was investigated.The chemical states and bonding characteristics of the system were characterized by X-ray photoelectron spectroscopy （XPS）.The results show that there is no existence of Hf-P or Hf-In and there are interfacial In2O3 and InPO4 at the interface.Ultraviolet spectrophotometer （UVS） was employed to obtain the band gap value of HfO2.In 3d and Hf 4f core-level spectra and valence spectra were employed to obtain the valence band offset of HfO2/InP.Experimental results show that the （5.88 ± 0.05） eV band gap of HfO2 is aligned to the band gap of InP with a conduction band offset （△Ec） of （2.74 ± 0.05） eV and a valence band offset （△Ev） of （1.80 ± 0.05） eV.Compared with HfO2 on Si,HfO2 on InP exhibits a much larger conduction band offset （1.35 eV larger）,which is beneficial to suppress the tunneling leakage current.展开更多
基金financially supported by the National Natural Science Foundation of China(Nos.50932001,51102020,and 51202013)the Important National Science&Technology Specific Projects(No.2009ZX02039-005)
文摘Resistive switching （RS） behaviors of Dy2O3- based memory devices with and without Pt nanocrystals （Pt-nc） layer were investigated for nonvolatile memory applications. The Cu/Pt-nc/Dy2O3/Pt memory exhibits excellent unipolar RS characteristics, including highly uniform switching parameters, lower switching voltage （〈1.2 V）, high resistance ratio （〉1 × 104）, a large number of switching cycles, as well as long retention time （〉1 × 105 s）, owing to the local electric field confined and strengthened near the nanocrystals＇ location.
基金financially supported by the National Natural Science Foundation of China(Nos.50932001,51102020,and 51202013)
文摘The band alignment of HfO2 film on p-type （100） InP substrate grown by magnetron sputtering was investigated.The chemical states and bonding characteristics of the system were characterized by X-ray photoelectron spectroscopy （XPS）.The results show that there is no existence of Hf-P or Hf-In and there are interfacial In2O3 and InPO4 at the interface.Ultraviolet spectrophotometer （UVS） was employed to obtain the band gap value of HfO2.In 3d and Hf 4f core-level spectra and valence spectra were employed to obtain the valence band offset of HfO2/InP.Experimental results show that the （5.88 ± 0.05） eV band gap of HfO2 is aligned to the band gap of InP with a conduction band offset （△Ec） of （2.74 ± 0.05） eV and a valence band offset （△Ev） of （1.80 ± 0.05） eV.Compared with HfO2 on Si,HfO2 on InP exhibits a much larger conduction band offset （1.35 eV larger）,which is beneficial to suppress the tunneling leakage current.
