The mechanisms occurring when the switched temperature technique is applied,as an accelerated enhanced low dose rate sensitivity(ELDRS)test technique,are investigated in terms of a specially designed gate-controlled l...The mechanisms occurring when the switched temperature technique is applied,as an accelerated enhanced low dose rate sensitivity(ELDRS)test technique,are investigated in terms of a specially designed gate-controlled lateral PNP transistor(GLPNP)that used to extract the interface traps(Nit)and oxide trapped charges(Not).Electrical characteristics in GLPNP transistors induced by ^(60)Co gamma irradiation are measured in situ as a function of total dose,showing that generation of Nit in the oxide is the primary cause of base current variations for the GLPNP.Based on the analysis of the variations of Nit and Not,with switching the temperature,the properties of accelerated protons release and suppressed protons loss play critical roles in determining the increased Nit formation leading to the base current degradation with dose accumulation.Simultaneously the hydrogen cracking mechanisms responsible for additional protons release are related to the neutralization of Not extending enhanced Nit buildup.In this study the switched temperature irradiation has been employed to conservatively estimate the ELDRS of GLPNP,which provides us with a new insight into the test technique for ELDRS.展开更多
Deviations from bulk morphologies in thin films of binary blends of alkyne-functionalized diblock copolymer poly（ethylene oxide）-bloek-poly（n-butyl methacrylate-random-propargyl methacrylate） （PEO-b-P（nBMA-r-PgM...Deviations from bulk morphologies in thin films of binary blends of alkyne-functionalized diblock copolymer poly（ethylene oxide）-bloek-poly（n-butyl methacrylate-random-propargyl methacrylate） （PEO-b-P（nBMA-r-PgMA）） and Rhodamine B azide are reported, where thermal click reaction between the two components leads to microphase separated morphologies. Both in the bulk and in thin films, increasing the azide loading ratio resulted in the u＇ansition from a lamellar microdomain morphology to a hexagonally packed cylindrical mireodomain morphology. However, in thin films the lamellae-cylinder transition was observed at a different azide loading ratio, which was determined by film thickness. As a result, significant deviations from the bulk morphology were observed. These results indicate that surface interactions and confined geometry can play an important role in dictating the morphology in thin films of BCP/additive binary blends.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.U1532261 and 1630141)
文摘The mechanisms occurring when the switched temperature technique is applied,as an accelerated enhanced low dose rate sensitivity(ELDRS)test technique,are investigated in terms of a specially designed gate-controlled lateral PNP transistor(GLPNP)that used to extract the interface traps(Nit)and oxide trapped charges(Not).Electrical characteristics in GLPNP transistors induced by ^(60)Co gamma irradiation are measured in situ as a function of total dose,showing that generation of Nit in the oxide is the primary cause of base current variations for the GLPNP.Based on the analysis of the variations of Nit and Not,with switching the temperature,the properties of accelerated protons release and suppressed protons loss play critical roles in determining the increased Nit formation leading to the base current degradation with dose accumulation.Simultaneously the hydrogen cracking mechanisms responsible for additional protons release are related to the neutralization of Not extending enhanced Nit buildup.In this study the switched temperature irradiation has been employed to conservatively estimate the ELDRS of GLPNP,which provides us with a new insight into the test technique for ELDRS.
基金supported by the Department of Energy Office of Basic Energy Science under Contract No. DE-FG02-96ER45612(XW, TPR design of experiments, synthesis of BCP)the NSF-supported Materials Research Science and Engineering Center and the NSF-supported Center for Hierarchical Manufacturing at University of Massachusetts Amherst(XS, WG, assistance with the GISAXS measurements)+1 种基金Use of the Advanced Photon Source, an Office of Science User Facility operated for the U.S.Department of Energy Office of Science by Argonne National Laboratory, was supported by the U.S. DOE under Contract No. DE-AC02-06CH11357Use of the Advanced Light Source is supported by the Director Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231
文摘Deviations from bulk morphologies in thin films of binary blends of alkyne-functionalized diblock copolymer poly（ethylene oxide）-bloek-poly（n-butyl methacrylate-random-propargyl methacrylate） （PEO-b-P（nBMA-r-PgMA）） and Rhodamine B azide are reported, where thermal click reaction between the two components leads to microphase separated morphologies. Both in the bulk and in thin films, increasing the azide loading ratio resulted in the u＇ansition from a lamellar microdomain morphology to a hexagonally packed cylindrical mireodomain morphology. However, in thin films the lamellae-cylinder transition was observed at a different azide loading ratio, which was determined by film thickness. As a result, significant deviations from the bulk morphology were observed. These results indicate that surface interactions and confined geometry can play an important role in dictating the morphology in thin films of BCP/additive binary blends.
