BACKGROUND Pelvic organ prolapse(POP)involves pelvic organ herniation into the vagina due to pelvic floor tissue laxity,and vaginal structure is an essential factor.In POP,the vaginal walls exhibit abnormal collagen d...BACKGROUND Pelvic organ prolapse(POP)involves pelvic organ herniation into the vagina due to pelvic floor tissue laxity,and vaginal structure is an essential factor.In POP,the vaginal walls exhibit abnormal collagen distribution and decreased fibroblast levels and functions.The intricate etiology of POP and the prohibition of trans-vaginal meshes in pelvic reconstruction surgery present challenges in targeted therapy development.Human umbilical cord mesenchymal stromal cells(hucMSCs)present limitations,but their exosomes(hucMSC-Exo)are promising therapeutic tools for promoting fibroblast proliferation and extracellular matrix remodeling.suppressed inflammation in POP group fibroblasts,stimulated primary fibroblast growth,and elevated collagen I(Col1)production in vitro.High-throughput RNA-seq of fibroblasts treated with hucMSC-Exo and miRNA sequencing of hucMSC-Exo revealed that abundant exosomal miRNAs downregulated matrix metalloproteinase 11(MMP11)expression.CONCLUSION HucMSC-Exo normalized the growth and function of primary fibroblasts from patients with POP by promoting cell growth and Col1 expression in vitro.Abundant miRNAs in hucMSC-Exo targeted and downregulated MMP11 expression.HucMSC-Exo-based therapy may be ideal for safely and effectively treating POP.展开更多
Chemical doping is an effective method to intrinsically modify the chemical and electronic property of graphene. We propose a novel approach to synthesize the nitrogen-doped graphene via thermal annealing graphene wit...Chemical doping is an effective method to intrinsically modify the chemical and electronic property of graphene. We propose a novel approach to synthesize the nitrogen-doped graphene via thermal annealing graphene with urea, in which the nitrogen source can be controllably released from the urea by varying the annealed temperature and time. The doped N content and the configuration N as well as the thermal stabilities are also evaluated with X-ray photoelectron spectroscopy and Raman spectra. Electrical measurements indi- cate that the conductivity of doped graphene can be well regulated with the N content. The method is expected to produce large scale and controllable N-doped graphene sheets for a variety of potential applications.展开更多
The interface state of hydrogen-terminated(C-H)diamond metal-oxide-semiconductor field-effect transistor(MOSFET)is critical for device performance.In this paper,we investigate the fixed charges and interface trap stat...The interface state of hydrogen-terminated(C-H)diamond metal-oxide-semiconductor field-effect transistor(MOSFET)is critical for device performance.In this paper,we investigate the fixed charges and interface trap states in C-H diamond MOSFETs by using different gate dielectric processes.The devices use Al_(2)O_(3) as gate dielectrics that are deposited via atomic layer deposition(ALD)at 80℃and 300℃,respectively,and their C-V and I-V characteristics are comparatively investigated.Mott-Schottky plots(1/C2-VG)suggest that positive and negative fixed charges with low density of about 10^(11)cm^(-2) are located in the 80-℃-and 300-℃deposition Al2O3 films,respectively.The analyses of direct current(DC)/pulsed I-V and frequency-dependent conductance show that the shallow interface traps(0.46 eV-0.52 eV and 0.53 eV-0.56 eV above the valence band of diamond for the 80-℃and 300-℃deposition conditions,respectively)with distinct density(7.8×10^(13)eV^(-1)·cm^(-2)-8.5×10^(13)eV^(-1)·cm^(-2) and 2.2×10^(13)eV^(-1)·cm^(-2)-5.1×10^(13)eV^(-1)·cm^(-2) for the 80-℃-and 300-℃-deposition conditions,respectively)are present at the Al2O3/C-H diamond interface.Dynamic pulsed I-V and capacitance dispersion results indicate that the ALD Al_(2)O_(3) technique with 300-℃deposition temperature has higher stability for C-H diamond MOSFETs.展开更多
We investigate the influence of fin architecture on linearity characteristics of AlGaN/GaNFinFET.It is found that the Fin FET with scaled fin dimensions exhibits much flatter Gm characteristics than the one with long ...We investigate the influence of fin architecture on linearity characteristics of AlGaN/GaNFinFET.It is found that the Fin FET with scaled fin dimensions exhibits much flatter Gm characteristics than the one with long fins as well as planar HEMT.According to the comparative study,we provide direct proof that source resistance rather than tri-gate structure itself dominates the Gm behavior.Furthermore,power measurements show that the optimized FinFET is capable of delivering a much higher output power density along with significant improvement in linearity characteristics than conventional planar HEMT.This study also highlights the importance of fin design in GaN-based FinFET for microwave power application,especially high-linearity applications.展开更多
基金Supported by the National Natural Science Foundation of China,No.81671439the Science and Technology Commission of Shanghai Municipality,No.21Y11906700 and No.20Y11907300the Medical Innovation Research Project of the Science and Technology Commission of Shanghai Municipality,No.22Y11906500。
文摘BACKGROUND Pelvic organ prolapse(POP)involves pelvic organ herniation into the vagina due to pelvic floor tissue laxity,and vaginal structure is an essential factor.In POP,the vaginal walls exhibit abnormal collagen distribution and decreased fibroblast levels and functions.The intricate etiology of POP and the prohibition of trans-vaginal meshes in pelvic reconstruction surgery present challenges in targeted therapy development.Human umbilical cord mesenchymal stromal cells(hucMSCs)present limitations,but their exosomes(hucMSC-Exo)are promising therapeutic tools for promoting fibroblast proliferation and extracellular matrix remodeling.suppressed inflammation in POP group fibroblasts,stimulated primary fibroblast growth,and elevated collagen I(Col1)production in vitro.High-throughput RNA-seq of fibroblasts treated with hucMSC-Exo and miRNA sequencing of hucMSC-Exo revealed that abundant exosomal miRNAs downregulated matrix metalloproteinase 11(MMP11)expression.CONCLUSION HucMSC-Exo normalized the growth and function of primary fibroblasts from patients with POP by promoting cell growth and Col1 expression in vitro.Abundant miRNAs in hucMSC-Exo targeted and downregulated MMP11 expression.HucMSC-Exo-based therapy may be ideal for safely and effectively treating POP.
文摘Chemical doping is an effective method to intrinsically modify the chemical and electronic property of graphene. We propose a novel approach to synthesize the nitrogen-doped graphene via thermal annealing graphene with urea, in which the nitrogen source can be controllably released from the urea by varying the annealed temperature and time. The doped N content and the configuration N as well as the thermal stabilities are also evaluated with X-ray photoelectron spectroscopy and Raman spectra. Electrical measurements indi- cate that the conductivity of doped graphene can be well regulated with the N content. The method is expected to produce large scale and controllable N-doped graphene sheets for a variety of potential applications.
基金the National Natural Science Foundation of China(Grant No.61922021)the National Key Research and Development Project,China(Grant No.2018YFE0115500)the Fund from the Sichuan Provincial Engineering Research Center for Broadband Microwave Circuit High Density Integration,China.
文摘The interface state of hydrogen-terminated(C-H)diamond metal-oxide-semiconductor field-effect transistor(MOSFET)is critical for device performance.In this paper,we investigate the fixed charges and interface trap states in C-H diamond MOSFETs by using different gate dielectric processes.The devices use Al_(2)O_(3) as gate dielectrics that are deposited via atomic layer deposition(ALD)at 80℃and 300℃,respectively,and their C-V and I-V characteristics are comparatively investigated.Mott-Schottky plots(1/C2-VG)suggest that positive and negative fixed charges with low density of about 10^(11)cm^(-2) are located in the 80-℃-and 300-℃deposition Al2O3 films,respectively.The analyses of direct current(DC)/pulsed I-V and frequency-dependent conductance show that the shallow interface traps(0.46 eV-0.52 eV and 0.53 eV-0.56 eV above the valence band of diamond for the 80-℃and 300-℃deposition conditions,respectively)with distinct density(7.8×10^(13)eV^(-1)·cm^(-2)-8.5×10^(13)eV^(-1)·cm^(-2) and 2.2×10^(13)eV^(-1)·cm^(-2)-5.1×10^(13)eV^(-1)·cm^(-2) for the 80-℃-and 300-℃-deposition conditions,respectively)are present at the Al2O3/C-H diamond interface.Dynamic pulsed I-V and capacitance dispersion results indicate that the ALD Al_(2)O_(3) technique with 300-℃deposition temperature has higher stability for C-H diamond MOSFETs.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61504125,61474101,and 61505181)
文摘We investigate the influence of fin architecture on linearity characteristics of AlGaN/GaNFinFET.It is found that the Fin FET with scaled fin dimensions exhibits much flatter Gm characteristics than the one with long fins as well as planar HEMT.According to the comparative study,we provide direct proof that source resistance rather than tri-gate structure itself dominates the Gm behavior.Furthermore,power measurements show that the optimized FinFET is capable of delivering a much higher output power density along with significant improvement in linearity characteristics than conventional planar HEMT.This study also highlights the importance of fin design in GaN-based FinFET for microwave power application,especially high-linearity applications.
基金supported by the National Key R&D Program of China(2022YFB3605400)the State Key Research and Development Project of Guangdong(2020B010174002)the National Natural Science Foundation of China(62234007,U21A20503 and U21A2071).
