An AgGeSbTe thin film is proposed as a negative heat-mode resist for dry lithography.It possesses high etching selectivity with the etching rate difference of as high as 62 nm/min in CHF_(3)/O_(2)mixed gases.The etche...An AgGeSbTe thin film is proposed as a negative heat-mode resist for dry lithography.It possesses high etching selectivity with the etching rate difference of as high as 62 nm/min in CHF_(3)/O_(2)mixed gases.The etched sidewall is steep without the obvious lateral corrosion.The lithographic characteristics and underlying physical mechanisms are analyzed.Besides,results of X-ray diffraction,Raman spectroscopy,and X-ray photoelectron spectroscopy further indicate that laser irradiation causes the formation of Ge,Sb,and AgTe crystals,which is the basis of etching selectivity.In addition,the etching selectivity of Si to AgGeS_(b)Te resist is as high as 19 at SF_(6)/Ar mixed gases,possessing good etching resistance.It is believed that the AgGeSbTe thin film is a promising heat-mode resist for dry lithography.展开更多
基金The work was supported by the National Natural Science Foundation of China(Nos.21773291,61904118,and 22002102)Natural Science Foundation of Jiangsu Province(Nos.BK20190935 and BK20190947)+1 种基金Natural Science Foundation of the Jiangsu Higher Education Institutions of China(No.19KJA210005)Jiangsu Key Laboratory for Environment Functional Materials.
文摘An AgGeSbTe thin film is proposed as a negative heat-mode resist for dry lithography.It possesses high etching selectivity with the etching rate difference of as high as 62 nm/min in CHF_(3)/O_(2)mixed gases.The etched sidewall is steep without the obvious lateral corrosion.The lithographic characteristics and underlying physical mechanisms are analyzed.Besides,results of X-ray diffraction,Raman spectroscopy,and X-ray photoelectron spectroscopy further indicate that laser irradiation causes the formation of Ge,Sb,and AgTe crystals,which is the basis of etching selectivity.In addition,the etching selectivity of Si to AgGeS_(b)Te resist is as high as 19 at SF_(6)/Ar mixed gases,possessing good etching resistance.It is believed that the AgGeSbTe thin film is a promising heat-mode resist for dry lithography.
