In situ carbon coating for enhanced chemical stability of copper nanowires

Copper nanowires(CuNWs)are promising electrode materials,especially for used in flexible and transparent electrodes,due to their advantages of earth-abundant,low-cost,high conductivity and flexibility.However,the poor stability of CuNWs against oxidation and chemic-al corrosion seriously hinders their practical applications.Herein,we propose a facile strategy to improve the chemical stability of CuNWs by in situ coating of carbon protective layer on top of them through hydrothermal carbonization method.The influential factors on the growth of carbon film including the concentration of the glucose precursor(carbon source),hydrothermal temperature,and hydrothermal time are sys-tematically studied.By tailoring these factors,carbon layers with thickness of 3-8 nm can be uniformly grown on CuNWs with appropriate glucose concentration around 80 mg·mL−1,hydrothermal temperature of 160-170°C,and hydrothermal time of 1-3 h.The as-prepared carbon-coated CuNWs show excellent resistance against corrosion and oxidation,and are of great potential to use broadly in various optoelectronic devices.

Black phosphorus electronics

As the scaling of silicon-based field-effect transistors has approached its physical limits, the search for alternative channel materials for future logic devices has attracted much attention. The discovery of graphene has unveiled another material family with layered structures called two-dimensional(2 D) materials. Black phosphorus(BP), the most stable allotrope of phosphorus, was introduced as a new type of 2 D material in 2014. Thanks to its high mobility, in-plane anisotropy and direct band gap, BP is considered to be a promising candidate for next-generation electronic and optoelectronic devices. Numerous studies have demonstrated the beneficial effects of introducing BP for device architectures. Herein, we present a review outlining recent progress towards high performance BP-based transistors. This review starts with the fundamental properties of BP, including its crystal structure, bandgap, and direct current(DC)and radio-frequency(RF) characteristics, followed by a detailed description of the modulation and application of those properties, involving anisotropy, functionalization and superlattices. Furthermore, we also discuss device design for high-performance transistors, with particular emphasis on interface engineering and device stability. Finally, we offer our perspective on the future of BP electronics, aiming to benefit colleagues who are interested in this exciting research field.