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利用AlGaN耦合作用调控WS_(2)层内和层间谷激子
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作者 曾鑫龙 康闻宇 +8 位作者 周小文 李玲龙 夏源政 刘海洋 杨成彪 吴雅苹 吴志明 李煦 康俊勇 《Science China Materials》 SCIE EI CAS CSCD 2023年第1期202-210,共9页
二维材料中的激子跃迁和能谷极化过程具有丰富的能谷物理特性,因此具有极大的研究价值.本文发现,单层和双层WS_(2)中激子和能谷特性可以通过耦合不同掺杂浓度的AlGaN进行有效调控.当WS_(2)和n型AlGaN耦合时,会出现显著的激子能量红移.... 二维材料中的激子跃迁和能谷极化过程具有丰富的能谷物理特性,因此具有极大的研究价值.本文发现,单层和双层WS_(2)中激子和能谷特性可以通过耦合不同掺杂浓度的AlGaN进行有效调控.当WS_(2)和n型AlGaN耦合时,会出现显著的激子能量红移.值得一提的是,来自AlGaN的层间电荷转移作用会促使双层WS_(2)形成II型能带,进而产生层间激子跃迁.层内激子峰和层间激子峰的能量和强度还可以通过双层WS_(2)中的转角进行调控.在13 K条件下,通过耦合n型AlGaN,单层WS_(2)的谷极化率高达82.2%.这是由于AlGaN的电子-声子相互作用会带来更高的激子衰减速率,且掺杂导致的载流子屏蔽效应会减少层间谷散射.层间激子的谷极化率明显高于层内激子,这是由于在层间激子中电子-空穴相互作用较弱,导致层间谷散射受到抑制.本文提出了一种简便有效的方法来调控二维材料的激子特性,在单层WS_(2)中实现了极高的谷极化,并在双层WS_(2)中诱导出层间激子.这些发现将激发谷激子物理学的创新探索,并推动新兴的谷电子器件的应用研究. 展开更多
关键词 ALGAN 二维材料 激子 屏蔽效应 衰减速率 极化过程 创新探索 极化率
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Direct synthesis of moirésuperlattice through chemical vapor deposition growth of monolayer WS_(2)on plasma-treated HOPG
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作者 Xiaowen Zhou Zongnan Zhang +6 位作者 xinlong zeng Yaping Wu Feiya Xu Chunmiao Zhang Xu Li Zhiming Wu Junyong Kang 《Nano Research》 SCIE EI CSCD 2022年第9期8587-8594,共8页
Vertical van der Waals(vdW)heterostructures composed of two-dimensional(2D)layered materials have recently attracted substantial interests due to their unique properties.However,the direct synthesis of moirésuper... Vertical van der Waals(vdW)heterostructures composed of two-dimensional(2D)layered materials have recently attracted substantial interests due to their unique properties.However,the direct synthesis of moirésuperlattice remains a great challenge due to the difficulties in heterogeneous nucleation on smooth vdW surfaces.Here,we report a controllable chemical vapor deposition growth of complete monolayer WS_(2)on highly ordered pyrolytic graphite(HOPG)substrates through the plasma pretreatment.The results show that the morphologies of the grown WS_(2)have a strong dependence on the plasma parameters,including gas composition,source power,and treatment time.It is found that the surface C–C bonds are broken in the plasma pretreated HOPG,and the formed small clusters can act as the nucleation sites for the subsequent growth of WS_(2).Moreover,the height of clusters dominates the growth mode of WS_(2)islands.A transition from a 2D mode to three-dimensional(3D)growth mode occurs when the height is higher than the interlayer spacing of the heterostructure.Besides,diverse moirésuperlattices with different twist angles for WS_(2)/HOPG heterostructures are observed,and the formation mechanism is further analyzed by firstprinciples calculations. 展开更多
关键词 chemical vapor deposition plasma pretreatment van der Waals(vdW)heterostructures moirésuperlattice
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