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Photoexcited carrier dynamics in a GaAs photoconductive switch under nJ excitation 被引量:2
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作者 Ming XU Yi WANG +6 位作者 Chun LIU xinyang si Rongrong GAO Wei LUO Guanghui QU Wanli JIA Qian LIU 《Plasma Science and Technology》 SCIE EI CAS CSCD 2022年第7期187-193,共7页
In this article,the bunched transport of photoexcited carriers in a GaAs photoconductive semiconductor switch(PCSS)with interdigitated electrodes is investigated under femtosecond laser excitation.Continuous outputs f... In this article,the bunched transport of photoexcited carriers in a GaAs photoconductive semiconductor switch(PCSS)with interdigitated electrodes is investigated under femtosecond laser excitation.Continuous outputs featuring high gain are obtained for single shots and at 1 kHz by varying the optical excitation energy.An ensemble three-valley Monte Carlo simulation is utilized to investigate the transient characteristics and the dynamic process of photoexcited carriers.It demonstrates that the presence of a plasma channel can be attributed to the bunching of high-density electron–hole pairs,which are transported in the form of a highdensity filamentary current.The results provide a picture of the evolution of photoexcited carriers during transient switching.A photoinduced heat effect is analyzed,which reveals the related failure mechanism of GaAs PCSS at various repetition rates. 展开更多
关键词 GaAs PCSS high gain(HG) plasma channel filamentary current heat effect
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