Two-dimensional(2D)semiconductors can be utilized to continually miniaturize nanoscale electronic de-vices.However,achieving a practical solution for satisfying electrical contact with 2D semiconductors remains challe...Two-dimensional(2D)semiconductors can be utilized to continually miniaturize nanoscale electronic de-vices.However,achieving a practical solution for satisfying electrical contact with 2D semiconductors remains challenging.In this study,we developed a novel contact structure with transferred multilayer(t-ML)MoS 2 by integrating both edge and top contact.After in-situ plasma treatment for the edge of the MoS 2 channel and successive metal deposition,we achieved 16 times lower contact resistivity(22.8 kΩμm)than that of the top contacted devices.The thickness-dependent electrical measurement indicates that edge contact is highly effective with thick MoS 2 due to the alleviated current-crowding effect re-sulting from the small contact area.The temperature-dependent transport measurement further confirms the effective minimization of the influence from the Schottky barrier and tunnelling barrier.Finally,the simplified resistor network model and energy-band diagram were proposed to understand the carrier transport mechanism.Our work provides a practical strategy for achieving excellent electrical contact between bulk metals and 2D semiconductors,paving the way for future large-scale 2D electronic devices.展开更多
Cellular therapies play a critical role in the treatment of spinal cord injury(SCI).Compared with cell-seeded conduits,fully cellular grafts have more similarities with autografts,and thus might result in better regen...Cellular therapies play a critical role in the treatment of spinal cord injury(SCI).Compared with cell-seeded conduits,fully cellular grafts have more similarities with autografts,and thus might result in better regeneration effects.In this study,we fabricated Schwann cell(SC)-neural stem cell(NSC)core–shell alginate hydrogel fibers in a coaxial extrusion manner.The rat SC line RSC96 and mouse NSC line NE-4C were used in this experiment.Fully cellular components were achieved in the core portion and the relative spatial positions of these two cells partially mimic the construction of nerve fibers in vivo.SCs were demonstrated to express more genes of neurotrophic factors in alginate shell.Enhanced proliferation and differentiation tendency of NSCs was observed when they were co-cultured with SCs.This model has strong potential for application in SCI repair.展开更多
In comparison to monolayer(1L),multilayer(ML)two-dimensional(2D)semiconducting transition metal dichalcogenides(TMDs)exhibit more application potential for electronic and optoelectronic devices due to their improved c...In comparison to monolayer(1L),multilayer(ML)two-dimensional(2D)semiconducting transition metal dichalcogenides(TMDs)exhibit more application potential for electronic and optoelectronic devices due to their improved current carrying capability,higher mobility,and broader spectral response.However,the investigation of devices based on wafer-scale ML-TMDs is still restricted by the synthesis of uniform and high-quality ML films.In this work,we propose a strategy of stacking MoS_(2) monolayers via a vacuum transfer method,by which one could obtain wafer-scale high-quality MoS_(2) films with the desired number of layers at will.The optical characteristics of these stacked ML-MoS_(2) films(>2L)indicate a weak interlayer coupling.The stacked MLMoS_(2) phototransistors show improved optoelectrical performances and a broader spectral response(approximately 300-1,000 nm)than that of 1L-MoS_(2).Additionally,the dual-gate ML-MoS_(2) transistors enable enhanced electrostatic control over the stacked ML-MoS_(2) channel,and the 3L and 4L thicknesses exhibit the optimal device performances according to the turning point of the current on/off ratio and the subthreshold swing.展开更多
The drastically changed thermal,mechanical,and chemical energies within the machined surface layer during hard machining tend to initiate microstructural alteration.In this paper,attention is paid to the introduction ...The drastically changed thermal,mechanical,and chemical energies within the machined surface layer during hard machining tend to initiate microstructural alteration.In this paper,attention is paid to the introduction of thermodynamic potential to unravel the mechanism of microstructure evolution.First,the thermodynamic potential-based model expressed by the Helmholtz free energy was proposed for predicting the microstructure changes of serrated chip and the machined surface layer.Second,the proposed model was implemented into a validated finite element simulation model for cutting operation as a user-defined subroutine.In addition,the predicted irreversible thermodynamic state change in the deformation zones associated with grain size,which was reduced to less than 1 mm from the initial size of 1.5 mm on the machined surface,was provided for an in-depth explanation.The good consistency between the simulated results and experimental data validated the efficacy of the developed model.This research helps to provide further insight into the microstructure alteration during metal cutting.展开更多
Memristive devices are an emerging new type of devices operating at the scale of a few or even single atoms.They are currently used as storage elements and are investigated for performing in-memory and neuromorphic co...Memristive devices are an emerging new type of devices operating at the scale of a few or even single atoms.They are currently used as storage elements and are investigated for performing in-memory and neuromorphic computing.Amongst these devices,Ag/amorphous-SiO_(x)/Pt memristors are among the most studied systems,with the electrically induced filament growth and dynamics being thoroughly investigated both theoretically and experimentally.In this paper,we report the observation of a novel feature in these devices:The appearance of new photoluminescent centers in SiO_(x) upon memristive switching,and photon emission correlated with the conductance changes.This observation might pave the way towards an intrinsically memristive atomic scale light source with applications in neural networks,optical interconnects,and quantum communication.展开更多
基金support of the National Key Re-search and Development Program(No.2016YFA0203900)the Natural Science Foundation of China(No.51802041)+1 种基金S.Dai ac-knowledges the support of the Shanghai Rising-star Program(No.20QA1402400)the Program for Professor of Special Appoint-ment(Eastern Scholar)at Shanghai Institutions of Higher Learning.
文摘Two-dimensional(2D)semiconductors can be utilized to continually miniaturize nanoscale electronic de-vices.However,achieving a practical solution for satisfying electrical contact with 2D semiconductors remains challenging.In this study,we developed a novel contact structure with transferred multilayer(t-ML)MoS 2 by integrating both edge and top contact.After in-situ plasma treatment for the edge of the MoS 2 channel and successive metal deposition,we achieved 16 times lower contact resistivity(22.8 kΩμm)than that of the top contacted devices.The thickness-dependent electrical measurement indicates that edge contact is highly effective with thick MoS 2 due to the alleviated current-crowding effect re-sulting from the small contact area.The temperature-dependent transport measurement further confirms the effective minimization of the influence from the Schottky barrier and tunnelling barrier.Finally,the simplified resistor network model and energy-band diagram were proposed to understand the carrier transport mechanism.Our work provides a practical strategy for achieving excellent electrical contact between bulk metals and 2D semiconductors,paving the way for future large-scale 2D electronic devices.
基金supported by Chinese army open Grant[No.BWS17J036]‘Biomanufacturing and Engineering Living Systems’Overseas Expertise Introduction Center for Discipline Innovation[No.G2017002].
文摘Cellular therapies play a critical role in the treatment of spinal cord injury(SCI).Compared with cell-seeded conduits,fully cellular grafts have more similarities with autografts,and thus might result in better regeneration effects.In this study,we fabricated Schwann cell(SC)-neural stem cell(NSC)core–shell alginate hydrogel fibers in a coaxial extrusion manner.The rat SC line RSC96 and mouse NSC line NE-4C were used in this experiment.Fully cellular components were achieved in the core portion and the relative spatial positions of these two cells partially mimic the construction of nerve fibers in vivo.SCs were demonstrated to express more genes of neurotrophic factors in alginate shell.Enhanced proliferation and differentiation tendency of NSCs was observed when they were co-cultured with SCs.This model has strong potential for application in SCI repair.
基金supported by the National Key Research and Development Program of China(Nos.2021YFA1200500 and 2018YFA0703700)in part by the National Natural Science Foundation of China(No.61774042)+1 种基金the Innovation Program of Shanghai Municipal Education Commission(No.2021-01-07-00-07-E00077)Shanghai Municipal Science and Technology Commission(Nos.21DZ1100900 and 20ZR1403200).
文摘In comparison to monolayer(1L),multilayer(ML)two-dimensional(2D)semiconducting transition metal dichalcogenides(TMDs)exhibit more application potential for electronic and optoelectronic devices due to their improved current carrying capability,higher mobility,and broader spectral response.However,the investigation of devices based on wafer-scale ML-TMDs is still restricted by the synthesis of uniform and high-quality ML films.In this work,we propose a strategy of stacking MoS_(2) monolayers via a vacuum transfer method,by which one could obtain wafer-scale high-quality MoS_(2) films with the desired number of layers at will.The optical characteristics of these stacked ML-MoS_(2) films(>2L)indicate a weak interlayer coupling.The stacked MLMoS_(2) phototransistors show improved optoelectrical performances and a broader spectral response(approximately 300-1,000 nm)than that of 1L-MoS_(2).Additionally,the dual-gate ML-MoS_(2) transistors enable enhanced electrostatic control over the stacked ML-MoS_(2) channel,and the 3L and 4L thicknesses exhibit the optimal device performances according to the turning point of the current on/off ratio and the subthreshold swing.
基金This work was supported by the National Natural Science Foundation of China(Grants Nos.51975333 and 51575321)the Major Science and Technology Innovation Project of Shandong Province,China(Grant No.2019JZZY010437)the Taishan Scholar Project of Shandong Province,China(Grant No.ts201712002).
文摘The drastically changed thermal,mechanical,and chemical energies within the machined surface layer during hard machining tend to initiate microstructural alteration.In this paper,attention is paid to the introduction of thermodynamic potential to unravel the mechanism of microstructure evolution.First,the thermodynamic potential-based model expressed by the Helmholtz free energy was proposed for predicting the microstructure changes of serrated chip and the machined surface layer.Second,the proposed model was implemented into a validated finite element simulation model for cutting operation as a user-defined subroutine.In addition,the predicted irreversible thermodynamic state change in the deformation zones associated with grain size,which was reduced to less than 1 mm from the initial size of 1.5 mm on the machined surface,was provided for an in-depth explanation.The good consistency between the simulated results and experimental data validated the efficacy of the developed model.This research helps to provide further insight into the microstructure alteration during metal cutting.
文摘Memristive devices are an emerging new type of devices operating at the scale of a few or even single atoms.They are currently used as storage elements and are investigated for performing in-memory and neuromorphic computing.Amongst these devices,Ag/amorphous-SiO_(x)/Pt memristors are among the most studied systems,with the electrically induced filament growth and dynamics being thoroughly investigated both theoretically and experimentally.In this paper,we report the observation of a novel feature in these devices:The appearance of new photoluminescent centers in SiO_(x) upon memristive switching,and photon emission correlated with the conductance changes.This observation might pave the way towards an intrinsically memristive atomic scale light source with applications in neural networks,optical interconnects,and quantum communication.