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The Bipolar Quantum Drift-diffusion Model 被引量:5
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作者 xiu qing chen Li chen 《Acta Mathematica Sinica,English Series》 SCIE CSCD 2009年第4期617-638,共22页
A fourth order parabolic system, the bipolar quantum drift-diffusion model in semiconductor simulation, with physically motivated Dirichlet-Neumann boundary condition is studied in this paper. By semidiscretization in... A fourth order parabolic system, the bipolar quantum drift-diffusion model in semiconductor simulation, with physically motivated Dirichlet-Neumann boundary condition is studied in this paper. By semidiscretization in time and compactness argument, the global existence and semiclassical limit are obtained, in which semiclassieal limit describes the relation between quantum and classical drift-diffusion models, Furthermore, in the case of constant doping, we prove the weak solution exponentially approaches its constant steady state as time increases to infinity. 展开更多
关键词 quantum drift-diffusion fourth order parabolic system weak solution semiclassical limit exponential decay
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