Current-induced multilevel magnetization switching in ferrimagnetic spintronic devices is highly pursued for the application in neuromorphic computing.In this work,we demonstrate the switching plasticity in Co/Gd ferr...Current-induced multilevel magnetization switching in ferrimagnetic spintronic devices is highly pursued for the application in neuromorphic computing.In this work,we demonstrate the switching plasticity in Co/Gd ferrimagnetic multilayers where the binary states magnetization switching induced by spin–orbit toque can be tuned into a multistate one as decreasing the domain nucleation barrier.Therefore,the switching plasticity can be tuned by the perpendicular magnetic anisotropy of the multilayers and the in-plane magnetic field.Moreover,we used the switching plasticity of Co/Gd multilayers for demonstrating spike timing-dependent plasticity and sigmoid-like activation behavior.This work gives useful guidance to design multilevel spintronic devices which could be applied in high-performance neuromorphic computing.展开更多
Antiferromagnets have been attracting tremendous interest in the spintronics community due to their intrinsic appealing properties,such as zero stray field and ultrafast spin dynamics.Recently,the electrical manipulat...Antiferromagnets have been attracting tremendous interest in the spintronics community due to their intrinsic appealing properties,such as zero stray field and ultrafast spin dynamics.Recently,the electrical manipulation of bulk properties of antiferromagnets has been widely studied,but exploring the use of antiferromagnetic(AFM)interfacial properties to investigate some key issues in spintronic devices is urgently desired.In this study,the magnetic and spin transport properties mediated by interlayer exchange coupling(IEC)are examined through spin-orbit torque(SOT)-induced tunability of interfacial spins in heavy-metal/like-synthetic antiferromagnet/antiferromagnet heterostructure devices.We found that the exchange bias and coercivity and the critical current density for SOT switching can be modulated by IEC,associating with the oscillation of SOTinduced interfacial spins reorientation at zero field,which can be well understood with the modified Ruderman-Kittel-KasuyaYosida model.Our finding opens a new route for understanding and using the AFM interfacial spins in spintronics.展开更多
基金supported by Beijing Natural Science Foundation Key Program(Grant No.Z190007)Beijing Natural Science Foundation(Grant No.2212048)+1 种基金the National Natural Science Foundation of China(Grant Nos.11474272,61774144,and 12004212)the Chinese Academy of Sciences(Grant Nos.QYZDY-SSW-JSC020,XDB28000000,and XDB44000000)。
文摘Current-induced multilevel magnetization switching in ferrimagnetic spintronic devices is highly pursued for the application in neuromorphic computing.In this work,we demonstrate the switching plasticity in Co/Gd ferrimagnetic multilayers where the binary states magnetization switching induced by spin–orbit toque can be tuned into a multistate one as decreasing the domain nucleation barrier.Therefore,the switching plasticity can be tuned by the perpendicular magnetic anisotropy of the multilayers and the in-plane magnetic field.Moreover,we used the switching plasticity of Co/Gd multilayers for demonstrating spike timing-dependent plasticity and sigmoid-like activation behavior.This work gives useful guidance to design multilevel spintronic devices which could be applied in high-performance neuromorphic computing.
基金supported by the National Key R&D Program of China(Grant No.2017YFB0405700)the National Natural Science Foundation of China(Grant Nos.11474272,and 61774144)+1 种基金the Beijing Natural Science Foundation Key Program(Grant No.Z190007)the Chinese Academy of Sciences(Grant Nos.QYZDY-SSW-JSC020,XDB28000000,and XDPB44000000)。
文摘Antiferromagnets have been attracting tremendous interest in the spintronics community due to their intrinsic appealing properties,such as zero stray field and ultrafast spin dynamics.Recently,the electrical manipulation of bulk properties of antiferromagnets has been widely studied,but exploring the use of antiferromagnetic(AFM)interfacial properties to investigate some key issues in spintronic devices is urgently desired.In this study,the magnetic and spin transport properties mediated by interlayer exchange coupling(IEC)are examined through spin-orbit torque(SOT)-induced tunability of interfacial spins in heavy-metal/like-synthetic antiferromagnet/antiferromagnet heterostructure devices.We found that the exchange bias and coercivity and the critical current density for SOT switching can be modulated by IEC,associating with the oscillation of SOTinduced interfacial spins reorientation at zero field,which can be well understood with the modified Ruderman-Kittel-KasuyaYosida model.Our finding opens a new route for understanding and using the AFM interfacial spins in spintronics.
