Health Risk Assessment on Rural Drinking Water Safety —A Case Study in Rain City District of Ya’an City of Sichuan Province

Taking Rain City District of Ya’an for example, this paper based on ComGIS (Component Object Model Geographic Information System) platform takes comprehensive and systematic detection on the exposure dose of chemical carcinogens and non-carcinogens from drinking water sources in this region and discusses health risk assessment of single factor and the whole health risk assessment. As, Hg, Cr, Pb, Cd and fluorides in some drinking water sources of Rain City District are analyzed according to Standards For Drinking Wa-ter Quality (GB5749-2006). A health risk assessment model called USEPA is also applied to drinking water health risk assessment and management countermeasure is proposed. The results show that the greatest health risk for individual person per year is caused by Cr(VI). The health risk of carcinogens is much higher than that of non-carcinogens: the greatest risk value due to non-carcinogen pollutants is caused by fluoride (F), achieving 1.05×10-8/a. The ranking of risk values due to non-carcinogen pollutants by drinking water is Pb>fluoride (F)>Hg, within Pb accounting for 44.77%, fluo-ride (F) accounting for 34.30% and Hg accounting for 20.92%. The average individual carcinogenesis annual risk of Cr(VI) is the greatest, achieving 8.91×10-4/a. The ranking of risk value due to chemical carcinogen by rural drinking water of Ya’an is Cr6+>As>Cd, within Cr6+ accounting for 91.12%, As accounting for 5.89% and Cd accounting for 3.00%. Based on this, the strategy and measures of the health risk management are put forward. This study has worked efficiently in practice. Compared with the same kind of methods which have been found, the paper has the outstanding results for the health risk assessment of the rural drinking water safety.

Quantum-dot light-emitting diodes with Fermi-level pinning at the hole-injection/hole-transporting interfaces

Quantum-dot light-emitting diodes(QLEDs)are multilayer electroluminescent devices promising for next-generation display and solid-state-lighting technologies.In the state-of-the-art QLEDs,hole-injection layers(HILs)with high work functions are generally used to achieve efficient hole injection.In these devices,Fermi-level pinning,a phenomenon often observed in heterojunctions involving organic semiconductors,can take place in the hole-injection/hole-transporting interfaces.However,an in-depth understanding of the impacts of Fermi-level pinning at the hole-injection/hole-transporting interfaces on the operation and performance of QLEDs is still lacking.Here,we develop a set of NiOx HILs with controlled work functions of 5.2–5.9 eV to investigate QLEDs with Fermi-level pinning at the hole-injection/hole-transporting interfaces.The results show that despite that Fermi-level pinning induces identical apparent hole-injection barriers,the red QLEDs using HILs with higher work functions show improved efficiency roll-off and better operational stability.Remarkably,the devices using the NiOx HILs with a work function of 5.9 eV demonstrate a peak external quantum efficiency of~18.0%and a long T95 operational lifetime of 8,800 h at 1,000 cd·m^(−2),representing the best-performing QLEDs with inorganic HILs.Our work provides a key design principle for future developments of the hole-injection/hole-transporting interfaces of QLEDs.