Zirconia coatings as hydrogen permeation barriers were formed on disktype ZrHj.s substrate speci mens in phosphate solution system by microarc oxidation technique. Influence of positive voltage on hydrogen per meation...Zirconia coatings as hydrogen permeation barriers were formed on disktype ZrHj.s substrate speci mens in phosphate solution system by microarc oxidation technique. Influence of positive voltage on hydrogen per meation barriers on the surface of zirconium hydride was investigated as the main factor. The thickness of total oxide layer increased from 42.5 to 55.0 ~tm the increase of positive voltage increasing from 325 up to 425 V. The permeation reduction factor （PRF） was observed under different voltages, which increased with the increasing positive voltages. The phase structure of oxide layer was monoclinic Zr02 and tetragonal ZrO1.88. No reduction reaction occured in the process of hydrogen escaping, and it indicates that hydrogen permeation through oxide layer is restricted.展开更多
基金supported by the National Natural Science Foundation of China(No.51164023)Inner Mongolia Natural Science Foundation(No.2009BS0801)
文摘Zirconia coatings as hydrogen permeation barriers were formed on disktype ZrHj.s substrate speci mens in phosphate solution system by microarc oxidation technique. Influence of positive voltage on hydrogen per meation barriers on the surface of zirconium hydride was investigated as the main factor. The thickness of total oxide layer increased from 42.5 to 55.0 ~tm the increase of positive voltage increasing from 325 up to 425 V. The permeation reduction factor （PRF） was observed under different voltages, which increased with the increasing positive voltages. The phase structure of oxide layer was monoclinic Zr02 and tetragonal ZrO1.88. No reduction reaction occured in the process of hydrogen escaping, and it indicates that hydrogen permeation through oxide layer is restricted.
